Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Toshiki Fujino

Yuji Takebayashi

Ryota Sasajima

Kenichi Suzaki

Kosuke Takagi

Kazuki Nonomura

Yuma Fujii

Yoshinori Baba

Naonori Akae

Takayuki Nakada

Masato Terasaki

Masayoshi Minami

Atsushi Umekawa

Shintaro Kogura

Unryu Ogawa

Risa Yamakoshi

Naoko Tsunoda

Yukihito Hada

Described herein is a technique capable of suppressing or preventing an inside of a source gas nozzle from being heated to a substrate processing temperature when a source gas is supplied through the source gas nozzle into a reaction tube in which a substrate is accommodated. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube made of a first material and capable of accommodating a substrate; and a source gas nozzle provided in the reaction tube and at least a part thereof made of a second material whose reflectance is higher than that of the first material and whose surface is rougher than that of the first material by bubbles contained therein, wherein a source gas is supplied through the source gas nozzle.

Substrate processing apparatus, gas nozzle and method of manufacturing semiconductor device

A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.

Substrate processing apparatus, recording medium, and fluid circulation mechanism

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.

Substrate processing apparatus and precursor gas nozzle

Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium

Gas supply nozzle

Gas nozzle substrate processing apparatus

Growing community of inventors

Toyama, Japan

Toshiki Fujino