Sumitomo Electric Industries, Limited

Momentive Performance Materials Gmbh

Sumitomo Metal Industries, Inc.

Toshiki Ebata

Marc Schaepkens

Ajit Sane

John T Mariner

Wei Fan

Xiang Liu

Naoki Matsumoto

Michitomo Iiyama

Hideki Hayashi

Shigeru Nakajima

Hiroshi Mabuchi

Kenichi Kikuchi

Kyoichi Komachi

Takahiro Yoshiki

Shuta Kanayama

A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10&#xb0; C.

Heating apparatus with enhanced thermal uniformity and method for making thereof

Plasma processing apparatus

A Schottky-gate field effect transistor comprises a substrate, an active layer formed in one surface of the substrate, a Schottky gate electrode in the form of an inverted trapezoid on the active layer. A heavily doped region is formed in the one surface of the substrate at each side of the inverted trapezoid Schottky gate electrode separately from the side edge of the bottom of the Schottky gate electrode by a certain distance but in self-alignment with the corresponding side edge of the top of the inverted trapezoid Schottky gate electrode. Source and drain electrodes are respectively formed on the heavily doped regions in ohmic contact thereto in such a manner that the edge of each of the source and drain electrodes close to Schottky gate electrode is in alignment with the corresponding side edge of the top of the inverted-trapezoid gate electrode.

Schottky-gate field effect transistor and method for producing the same

The semiconductor device includes a semiconductor substrate, a two-layer insulating film formed on the substrate and constituted by upper and lower insulating layers made of insulating materials different, in chemical properties, from each other, respectively, an electrode and a first level interconnection such that the electrode and the first level interconnection are embedded in an opening formed on the two-layer insulating film.

Semiconductor device manufacturing by sequential ion and wet etchings

A process for fabricating a Schottky-barrier gate field effect transistor, consists of forming an active layer of one electrically conductive type semiconductor crystal on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer having a first active layer whose thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a carrier concentration which is substantially equal to that of the first active layer and having a larger thickness than that of the first active layer and provided on both sides of the first active layer; the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part.

Process for fabricating a Schottky-barrier gate field effect transistor

Growing community of inventors

Osaka, Japan

Toshiki Ebata