Megachips Corporation

Neural Systems Corp.

Ricoh Company, Ltd.

Toshikazu Yoshimizu

Masahiro Shindo

Toshifumi Asakawa

Sumiyoshi Ueyama

Yukio Kadowaki

Hideo Azumai

Shoji Matsumoto

Takashi Seigenji

Shunpei Tamaki

Toshio Kawakami

Kenji Fujita

Kenichi Kurihara

In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.

Apparatus for forming single-crystalline thin film by beam irradiator

Method of forming single-crystalline thin film using beam irradiating

Method of and apparatus for forming single-crystalline thin film, beam

Method of forming single-crystalline thin film by beam irradiator

In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate. (FIG. 13)

A plurality of bare semiconductor IC chips are mounted on a base substrate. The base substrate and IC chips are sealed in a package to constitute a multichip module. Diodes are disposed on the base substrate so that an end of each diode is connected to a terminal for connecting each IC chip with said base substrate and the other end thereof is connected to a prescribed voltage. As a result, it is possible to inspect the base substrate by contacting probes only with a connecting pad between the base substrate and a package, to reduce the number of pins of a probe card, to produce a cheap probe card and to reduce a rate of imperfect contact between the probe card and an inspecting pad.

Base substrate of multichip module and method for inspecting the same

A multi-chip module semiconductor device including a plurality of IC chips arranged in a side-by-side relationship on a supporting member such as a tab is provided. Each of the IC chips is provided with an array of bonding pads for connection with the exterior of the device only along such side to which no other IC chip is disposed adjacent thereto.

Multi-chip module integrated circuit

A thermal transfer printing apparatus that comprises a thermal head, an ink transfer medium having an ink layer, a printing medium to which the ink is to be transferred, a platen for pressing the ink transfer medium together with the printing medium against the thermal head. The thermal head comprises a substrate, a plurality of heating elements disposed on a surface of the substrate close to an end of the substrate and two electrode lines connected to each of the plurality of heating elements and formed on the substrate. Each line extends from each heating element toward a direction opposite to the substrate end with respect to the heating elements. The apparatus further comprises a pulling out unit for separating and pulling out the ink transer medium from the printing medium after passing over a position of the heating elements and a direction change mechanism for changing direction of the ink transfer medium pulled out by the pulling out unit with respect to the surface of the substrate.

Thermal transfer printing apparatus with movable ink transfer pulling

An IC mounting method and its resulting structure, such as an IC card is provided. An IC card includes a metal plate formed with at least one hole, and an IC chip is located fixed in position in the hole with a filler material filling the gap between the hole and the IC chip. An interconnect pattern is provided on the plate with an electrically insulating film sandwiched therebetween, and the interconnect pattern is in electrical contact with a contact pad of the IC chip. Preferably, the surface of the IC chip on which the contact pad is provided is substantially flush with one surface of the plate. When an electrically insulating film is fixedly attached to a substrate having a hole, in which an IC chip is fixedly provided, by an adhesive agent, the material of the film is selected to be similar to the material of the adhesive agent. In this manner, a contact hole may be formed in registry with a contact pad of the IC chip in the insulating film by one etching step without formation of a stepped portion in the resulting contact hole. Moreover, a film to be later removed is first formed on a substrate, and after providing elements on the film and its supporting structure, a predetermined processing, such as exposure to light, is applied to the film to change its property, thereby causing the elements to be separated away from the film.

Growing community of inventors

Suita, Japan

Toshikazu Yoshimizu