Mitsubishi Electric Corporation

Toshikazu Tanioka

Yoichiro Tarui

Masayuki Furuhashi

Naruhisa Miura

Masayuki Imaizumi

Tomokatsu Watanabe

Yasunori Oritsuki

Kazuo Kobayashi

Shiro Hino

Shohei Yoshida

Yoshinori Matsuno

Kenichi Hamano

Sunao Aya

Yukiyasu Nakao

Daisuke Taniguchi

Hideaki Yuki

Keiko Sakai

Katsuhiro Fujiyoshi

Yosuke Setoguchi

Naochika Hanano

Junya Miwa

A silicon carbide semiconductor device includes an n-type epitaxial layer provided on a SiC substrate, a front surface electrode provided on the epitaxial layer, and a p-type electric field relieving region provided in the upper layer of the epitaxial layer in a terminal region. On the epitaxial layer, a first protective film composed of an interlayer insulating film and a protective oxide film that covers at least a part of the electric field relieving region is provided. A second protective film composed of a polyimide protective film is provided via a silicon nitride film so as to cover the outer end portion of the surface electrode, the first protective film, and at least a part of the epitaxial layer. The silicon nitride film protrudes from the second protective film at both an inner side end portion and an outer side end portion.

Silicon carbide semiconductor device and power conversion apparatus

A method for manufacturing a silicon carbide semiconductor device according to the technology disclosed in the present specification includes: forming a drift layer on an upper surface of a silicon carbide semiconductor substrate; forming a hard mask on the upper surface of the drift layer by anisotropic etching; and forming a first ion-implanted region in a surface layer of the drift layer by implanting ions into the drift layer in a state in which the hard mask is formed, in which the hard mask includes a sidewall perpendicular to the upper surface of the drift layer.

Method of manufacturing silicon carbide semiconductor device

In some examples, a semiconductor device includes a substrate, an interlayer insulating film, a gate pad provided on the interlayer insulating film, a source electrode that is provided on the interlayer insulating film, source wiring provided on the interlayer insulating film, and gate wiring that is provided on the interlayer insulating film and is electrically connected to the gate pad. The size of the source wiring is not increased, and a high impurity concentration region having a higher impurity concentration than a drift layer is formed on the surface of the substrate at a location directly below the gate pad.

Semiconductor device

The present invention relates to a power semiconductor device which includes: a first conductivity-type silicon carbide semiconductor layer; a switching device which is formed on the silicon carbide semiconductor layer; a second conductivity-type electric field relaxation impurity region which is formed in a terminal portion of a formation region of the switching device and which relaxes an electric field of the terminal portion; and a first conductivity-type added region which is provided between second conductivity-type well regions of a plurality of unit cells that constitutes the switching device, and at least on an outer side of the electric field relaxation impurity region, and which has an impurity concentration higher than that in the silicon carbide semiconductor layer.

Power semiconductor device

A silicon carbide semiconductor device can switch between an on-state and an off-state by controlling a channel region with an application of a gate voltage. The silicon carbide semiconductor device includes a silicon carbide layer, a gate insulating film, and a gate electrode. The silicon carbide layer includes a channel region. The gate insulating film covers the channel region. The gate electrode faces the channel region with the gate insulating film therebetween. The resistance of the channel region in the on-state takes a minimum value at a temperature of not less than 100&#xb0; C. and not more than 150&#xb0; C.

Silicon carbide semiconductor device and method for manufacturing same

A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).

Method of manufacturing semiconductor device

A silicon carbide semiconductor device that is able to increase the gate reliability, and to provide a method for manufacturing the silicon carbide semiconductor device, and that includes: a source electrode selectively formed on a source region; a gate insulating film formed so as to extend over the source region; and a gate electrode formed on the gate insulating film. The source region includes a first source region located below the source electrode, and a second source region surrounding the first source region. The doping concentration in a superficial layer of the second source region is lower than the doping concentration in a superficial layer of the first source region. The doping concentration in the second source region is higher in a deep portion than in a superficial portion thereof.

Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device

In a silicon carbide MOSFET, interface state generated at an interface between a silicon carbide layer and a gate insulating film cannot be reduced sufficiently, and mobility of a carrier is decreased. To solve this problem, a silicon carbide semiconductor device according to this invention includes a substrate introduction step of introducing a substrate, which includes a silicon carbide layer on which a gate insulating film is formed, in a furnace, such that the substrate is arranged in a predetermined position of the furnace, and a heating step of heating the furnace having the substrate introduced therein while introducing nitrogen monoxide and nitrogen therein, wherein, in the heating step, nitrogen is reacted to nitride an interface between the gate insulating film and the silicon carbide layer.

Method for manufacturing silicon carbide semiconductor device

A method of manufacturing a silicon carbide semiconductor device having a silicon carbide layer, the method including a step of implanting at least one of Al ions, B ions and Ga ions having an implantation concentration in a range not lower than 1E19 cmand not higher than 1E21 cmfrom a main surface of the silicon carbide layer toward the inside of the silicon carbide layer while maintaining the temperature of the silicon carbide layer at 175&#xb0; C. or higher, to form a p-type impurity layer; and forming a contact electrode whose back surface establishes ohmic contact with a front surface of the p-type impurity layer on the front surface of the p-type impurity layer.

Growing community of inventors

Tokyo, Japan

Toshikazu Tanioka