Tokyo Ohka Kogyo Co., Ltd.

Nara Institute of Science and Technology

Toyko Ohka Kogyo Co., Ltd.

Toshikazu Takayama

Keita Ishiduka

Tomotaka Yamada

Hideo Hada

Mitsuru Sato

Takeshi Iwai

Satoshi Fujimura

Masaaki Yoshida

Jun Iwashita

Taku Hirayama

Toshikazu Tachikawa

Ryoichi Takasu

Masahito Yahagi

Takashi Kamizono

Tatsuya Fujii

Issei Suzuki

Yuki Fukumura

Yoshitaka Komuro

Kazufumi Sato

Toshiyuki Ogata

Katsumi Oomori

Yasushi Fujii

Daisuke Kawana

Yohei Kinoshita

Shigeru Yokoi

Kazuaki Ebisawa

Isamu Takagi

Takayuki Hosono

Hisanobu Harada

Koji Yonemura

Masanobu Naito

Yusuke Nakamura

A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group, Vais a divalent hydrocarbon group, nrepresents an integer of 0 to 2, Yais a carbon atom, Xais a group forming a monocyclic aliphatic hydrocarbon group together with Ya, and Rais an aromatic hydrocarbon group or a specific unsaturated hydrocarbon group. In general formula (b1), Rrepresents a cyclic hydrocarbon group, Yrepresents a divalent linking group containing an ester bond, Vrepresents an alkylene group, a fluorinated alkylene group, or a single bond, and Mis an m-valent organic cation. 

Resist composition and method for forming resist pattern

A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rrepresents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yrepresents a divalent linking group containing an ester bond (&#x2014;C(&#x2550;O)&#x2014;O&#x2014; or &#x2014;O&#x2014;C(&#x2550;O)&#x2014;), Vrepresents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mrepresents an m-valent organic cation.R&#x2014;Y&#x2014;V&#x2014;CF&#x2014;SO(M)&#x2003;&#x2003;(b1)

Resist composition, method for forming resist pattern, compound, and acid generator

A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group. Vais a divalent hydrocarbon group. nrepresents an integer of 0 to 2. Ra'and Ra&#x2032;are a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. Ra&#x2032;is a phenyl group, a naphthyl group, or an anthryl group. In general formula (b1), Rrepresents a cyclic hydrocarbon group. Yrepresents a divalent linking group containing an ester bond. Vrepresents an alkylene group, a fluorinated alkylene group, or a single bond. m is an integer of 1 or more, and Mis an m-valent organic cation. 

A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length Lof the rod-like molecule is 2.0 or less times L, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.

Substrate having rod-like molecules on surface thereof and method for producing the same

Disclosed are: a composition for forming a resist protection film, which shows less damage to a resist film, can form a good, rectangular resist pattern, and can be used regardless of the structure of a resin used in a resist composition; and a method for forming a resist pattern by using the composition. Specifically, disclosed are: a composition for forming a resist protection film, which comprises (a) an alkali-soluble polymer and (b) an ether-based solvent; and a method for forming a resist pattern by using the composition.

Composition for formation of resist protection film, and method for formation of resist pattern using the same

A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.

Photosensitive resin composition and method of forming pattern

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Resist composition

Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a), including structural units (a-) containing an anhydride of a dicarboxylic acid and structural units (a-) containing a phenolic hydroxyl group.

The invention discloses a chemical-amplification positive-working photoresist composition of the crosslinked type used for photolithographic patterning works in the manufacture of electronic devices. While the composition comprises a film-forming resinous ingredient capable of being imparted with increased alkali-solubility in the presence of an acid and a radiation-sensitive acid-generating compound, optionally, with further admixture of an aliphatic amine compound and an acid compound, the inventive photoresist composition is characterized by the unique resinous ingredient which consists of four types of monomeric units including hydroxystyrene units, styrene units, monomeric units having acid-dissociable solubility-reducing groups and crosslinking units. The acid-dissociable solubility-reducing group is not conventional tert-butoxycarbonyloxy group but characteristically a 1-alkylcyclohexyl group or a polycyclic saturated aliphatic hydrocarbon group.

Crosslinked positive-working photoresist composition

Growing community of inventors

Kawasaki, Japan

Toshikazu Takayama