Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Showa Denko K.k.

Central Research Institute of Electric Power Industry

Toshikazu Sugiura

Katsumi Suzuki

Hidekazu Tsuchida

Masahiko Ito

Isaho Kamata

Kazukuni Hara

Masami Naito

Hiroaki Fujibayashi

Keisuke Fukada

Hideyuki Uehigashi

Naoto Ishibashi

Hirofumi Aoki

Akira Bando

A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 &#x3bc;m/h or more from an initial growth stage.

SiC epitaxial wafer and method for producing same

A SiC Schottky-barrier diode and a SiPiN diode are connected in parallel. Due to a difference in their thermal properties, a relatively large current flows in the SiPiN diode at a high temperature in which electro migration progresses easily in a solder layer, and the progression of the electro migration is suppressed. At a low temperature in which the electro migration does not progress so much, only a relatively small current flows in the SiPiN diode, and a loss suppression by the SiC Schottky-barrier diode is achieved.

Flyback diode and on-board power source device

Growing community of inventors

Okazaki, Japan

Toshikazu Sugiura