Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Toshikazu Onishi

Tetsuzo Ueda

Daisuke Ueda

Kazutoshi Onozawa

Hideto Adachi

Akira Takamori

Masaya Mannou

Tatsuya Tanigawa

Tsuyoshi Tanaka

Shinji Yoshida

Shinichi Takigawa

Kenichi Inoue

Jun Shimizu

A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Terahertz wave radiating element

A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.

Surface emitting laser, photodetector and optical communication system using the same

A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

Semiconductor light emitting device

An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same

An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly provided with compression strain and each barrier layer is provided with large extension strain in a center portion thereof along the thickness direction and small extension strain in portions thereof in the vicinity of the well layers.

Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer

According to the present invention, a first p-side electrodeA made of metal which is provided with regularly arranged holeshaving a diameter smaller than a laser oscillation wavelength and a second p-side electrodeB arranged around the periphery of the first p-type electrodeA are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrodeand an n-type mirroris first converted to a surface plasmon and then reconverted to the light by the p-side electrodeA, and then emitted outside the resonator.

Laser device

An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.

Group III-V compound semiconductor and group III-V compound semiconductor device using the same

A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.

Semiconductor laser device and method for fabricating the same

A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlGaInP (where 0&#x2266;a&#x2266;1, 0&#x2266;b&#x2266;1, and 0&#x2266;a+b&#x2266;1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.

Semiconductor laser device

A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.

Compound semiconductor, method for manufacturing the same, semiconductor device, and method for manufacturing the same

A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is doped with magnesium as a first impurity to have a high resistivity. The second cladding layer is doped with zinc as a second impurity to have a resistivity lower than the resistivity of the first cladding layer.

A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad layer formed on the first active layer and made of a compound semiconductor containing a first dopant, and a second active region formed on the second region and made of a compound semiconductor containing a second dopant having a diffusion coefficient with respect to the first active region which is higher than that of the first dopant.

A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2&#xd7;10cm.

Semiconductor device and method for producing the same

A first semiconductor laminated structure including a first active layer for oscillating a first laser beam having a first wavelength band is provided on a front-side region of a substrate. A second semiconductor laminated structure including a second active layer for oscillating a second laser beam having a second wavelength band is provided on a rear-side region of the substrate. An emission direction of the first laser beam and an emission direction of the second laser beam are same.

Growing community of inventors

Kyoto, Japan

Toshikazu Onishi