Sanyo Electric Co., Ltd.

Kanto Sanyo Semiconductors Co., Ltd.

Atr Optical & Radio Communications Research Laboratories

Toshikazu Imaoka

Tetsuro Sawai

Atsushi Saita

Takeshi Yamaguchi

Hisanori Uda

Toshikazu Hirai

Yasoo Harada

Ryosuke Usui

Takeshi Otsuka

Makoto Tsubonoya

Hiroyuki Watanabe

Yasunori Inoue

Kenichi Kobayashi

Masao Nishida

Kiyoshi Mita

Satoru Sekiguchi

Toshimichi Naruse

Atsushi Kato

Katsuaki Onoda

Kiyokazu Kamado

Atsushi Nakano

Keiichi Honda

Nobuaki Imai

Yoichi Nabeta

Akihiro Sato

A first wiring layer in a circuit substrate structure is provided with a first inductor and a second inductor. A dielectric layer is provided with a first via and a second via electrically connected to the first inductor and the second inductor, respectively. A second wiring layer is provided with: a bridge electrically connecting the first via and the second via; and a conductive pattern provided around the bridge, the outer edge of the conductive pattern being located outside the outer edge of the first wiring pattern and the second wiring pattern in the first wiring layer. The bridge functions as a coplanar line and suppresses generation of electromagnetic field.

Circuit substrate structure and circuit apparatus

A semiconductor module includes: a substrate having a wiring layer; a first rectangular-shaped semiconductor device mounted on one surface of the substrate; a second rectangular-shaped semiconductor device mounted on the other surface of the substrate. The first semiconductor device is arranged such that each side thereof is not parallel to that of the second semiconductor device, and that the first semiconductor device is superimposed on the second semiconductor device, when seen from the direction perpendicular to the surface of the substrate.

Semiconductor module

A semiconductor module includes a multilayer board, a first circuit element mounted on the multilayer board, a second circuit element stacked on the first circuit element, an interposer board, provided between the first circuit element and the second circuit element, which includes an antenna conductor, a passive element, mounted on the multilayer board, which is connected to the antenna conductor, and a molded resin layer which seals the respective elements. The antenna conductor is structured by a spiral-shaped wiring pattern and the both ends of the antenna conductor are connected to the passive element via a bonding wire. The antenna conductor functions as a loop antenna with the passive element inserted.

Semiconductor module and mobile apparatus

A semiconductor apparatus includes: a wiring board; a first semiconductor device mounted on the wiring board; a second semiconductor device which is stacked on the first semiconductor device and a projection part projects from the outer edge of the first semiconductor device; and a sealing resin layer which seals each semiconductor device. And the second semiconductor device has thereon a first analog cell, and a second analog cell which reaches a higher temperature than the first analog cell, and the second analog cell is arranged so as to include the projection part of the second semiconductor device.

Semiconductor apparatus and mobile apparatus

A technique for reducing the size of a semiconductor device is provided. A semiconductor device comprises a base, a semiconductor chip, a chip component, an insulating base, a wiring pattern, a via plug, an external lead-out electrode, a recess, and a resin. The insulating base has a multi-layer structure formed by laminating a plurality of insulator films. The semiconductor chip and the chip component are mounted on the base and embedded in the insulating base. A recess is formed on the surface of the semiconductor device and reaches down to any of wiring conductor layers. The semiconductor chip and the chip component are mounted on the recess.

Semiconductor device having laminated structure

A semiconductor pellet and chip components are provided on an insulating substrate, and are sealed with a molding resin that is molded by transfer molding. The chip components are positioned so as to surround the semiconductor pellet on all four sides. The lengthwise directions of the chip components surrounding the semiconductor pellet are aligned in a uniform direction. The insulating substrate is set within a die molding apparatus so that during resin injection, the lengthwise directions of the chip components are aligned substantially perpendicularly to the direction of flow of the injected resin.

Resin-sealed semiconductor device and method of manufacturing the same

A signal line circuit device is disposed on top of a mounting substrate. The signal line circuit device comprises a dielectric layer, a signal line formed on one surface of the dielectric layer, and a spacer (formed from a solder or a photo solder resist), which is formed between the mounting substrate and the dielectric layer, and generates a space separation between the signal line and the mounting substrate.

Signal line circuit device

The ground noise is reduced which propagates between circuit elements in a circuit device having a multiple stack structure. A grounding bonding pad provided on the surface of a second circuit element is connected to a bonding wire provided on the surface of a conduction layer via a grounding wire such as gold. A bonding pad provided on the surface of the conductive layer is connected to a lead provided on a ground wire via a grounding wire such as gold. This structure creates a capacitance between the second circuit element and the conduction layer so as to prevent the propagation of noise circuit from element to the ground wiring.

Circuit device

A wiring board in which a line can be made narrower and/or a transmission loss can be reduced is developed. The wiring board includes a first conductor and a second conductor maintained at the same potential, a dielectric material layer provided between the first and second conductors, and a third conductor embedded in the dielectric material layer. In the wiring board, a thickness of the dielectric material layer in a first region located between the third conductor and the first conductor is larger than a thickness of the dielectric material layer in a second region located between the third conductor and the second conductor. Moreover, a cross-sectional shape of the third conductor is trapezoidal in which angles of respective ends of the third conductor on a side closer to the second conductor are obtuse.

Wiring board and circuit apparatus

A semiconductor apparatus comprises a substrate, a semiconductor chip fixedly secured on one side of the substrate, a spirally shaped coil formed on the other side of the substrate and electrically connected to the semiconductor chip, and a conductive pattern formed on a surface of the one side of the substrate facing to the semiconductor chip for stabilizing an inductance characteristic of the coil.

Semiconductor device with a substrate having a spiral shaped coil

A control voltage is fed to an oscillation circuit from a control terminal, and a power supply voltage is fed thereto from a power supply terminal. An output circuit is provided between the oscillation circuit and an output terminal. The power supply terminal is connected to a feedback terminal through a DC separating capacitor and an amplifier. A signal leaking out to the power supply terminal from the oscillation circuit is fed to the amplifier through the DC separating capacitor. The amplifier amplifies the signal leaking out to the power supply terminal, and feeds the amplified signal to the feedback terminal as a feedback signal Loop.

Voltage controlled oscillator and phase-locked oscillator using the same

An impedance transformer is so designed that the impedance and the reactance of a tuning part reach zero at a central control voltage. An open stub is employed for setting the characteristic impedance of a tuning stub to the minimum value when a variable reactance circuit is inductive while setting the characteristic impedance to &minus;1.22 times the reactance of the variable reactance circuit when the variable reactance circuit is capacitive. A short stub is employed for setting the characteristic impedance of the tuning stub to 0.82 times the reactance of the variable reactance circuit when the variable reactance is inductive, while setting the characteristic impedance to the maximum when the variable reactance circuit is capacitive.

Voltage-controlled oscillator and communication device

A dielectric resonator is formed on a dielectric substrate. A pair of microstrip lines is formed to be electromagnetically coupled with the dielectric resonator. An end of each of the microstrip lines is open to define an open end while another end is arranged to approximate to the dielectric resonator for defining a node. A cathode and an anode of a varactor diode are connected to the node of each of the microstrip lines respectively.

Voltage-controlled oscillator having a variable capacitive element with an electrode coupled to a resonator

In a semiconductor device provided with a semiconductor substrate having two surfaces opposing to each other and having a circuit including a transistor having a plurality of electrodes, the circuit is formed on at least one of the two surfaces. Insulating films are formed on the two surfaces of the semiconductor substrate, respectively, and connecting electrodes are formed on a surface of the insulating film and electrically connected to the circuit. Further, a surface grounding conductor is formed on a surface of each of the insulating films so as to cover the surface of each of the insulating films except for portions where the connecting electrodes are formed. Accordingly, any possible interference of the circuit formed on the semiconductor device with the external circuit can be prevented.

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Ogaki, Japan

Toshikazu Imaoka