Fujitsu Corporation

Toshikatsu Minagawa

Eiichi Hoshino

Keiji Watanabe

Ei Yano

Koji Nozaki

Yukihiro Sato

Miwa Kozawa

Takahisa Namiki

Junichi Kon

Masahiro Uraguchi

Yuichi Yamamoto

Yuuichi Yamamoto

Masahiko Uraguchi

A developer used for the formation of a resist pattern from a resist resin based on a halogenated alkylstyrene, wherein the developer is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin based on a halogenated alkylstyrene. The developer is useful for the formation of photomasks, including various masks and reticles used to form various device patterns in a semiconductor product, a plasma display panel (PDP), a liquid crystal display (LCD) or the like. A method of forming a resist pattern using the developer is also disclosed. In addition, a photomask produced using the developer and the method is disclosed.

Developer and method for forming resist pattern and photomask produced by use thereof

A resist composition comprising, in a resist, an additive which has a melting point-of 160&deg; C. or above, contains no aromatic ring, has a molecular size of no greater than 50 &angst; and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.

Resist composition and pattern forming process

A film patterning method using resist as a mask, comprises the steps of forming a film 2 on a substrate 1, coating resist 3 on the film 2, exposing the resist 3, developing the resist 3 by a liquid phase developing solution 4, removing the liquid developing solution 4 from a surface of the film 2, irradiating ultraviolet rays onto the resist 3, which remains on the film 2 by the developing step, in an oxygen containing atmosphere, removing developed residue of the surface of the resist 3 by supplying an alkali aqueous solution 5 to the resist 3 which has remained on the film 2, and forming patterns of the film 2 by etching the film 2 exposed from the resist 3. Accordingly, the unnecessary residue of resist can be removed from the substrate in a short time after the development.

Film patterning method utilizing post-development residue remover

Growing community of inventors

Kawasaki, Japan

Toshikatsu Minagawa