Renesas Electronics Corporation

Nec Electronics Corporation

Toshiji Taiji

Daisuke Oshida

Yasuaki Tsuchiya

Manabu Iguchi

Toshiyuki Takewaki

Masayuki Hiroi

Takuji Onuma

Mieko Hasegawa

Hironori Toyoshima

Hiroaki Nanba

Ichiro Honma

Takaharu Kunugi

Naoya Inoue

Takuya Maruyama

Hiroyuki Kunishima

Tomoyuki Ito

Makoto Ueki

Ippei Kume

Masashige Moritoki

Youichi Yamamoto

Kenichi Aoyagi

Shin Sakurai

Hirokazu Katsuyama

Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).

Semiconductor device and method of manufacturing the same

The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.

Method of manufacturing semiconductor device

A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

Method of manfacturing semiconductor device

The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.

Slurry for chemical mechanical polishing

Growing community of inventors

Kanagawa, Japan

Toshiji Taiji