Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Toshiji Hamatani

Shunpei Yamazaki

Hisashi Ohtani

Jun Koyama

Satoshi Teramoto

Toshimitsu Konuma

Toru Takayama

Akiharu Miyanaga

Akira Mase

Mitsuaki Osame

Masahiko Hayakawa

Yasushi Ogata

Mitsunori Sakama

Takashi Inujima

Toshiharu Yamaguchi

Koichiro Tanaka

Takeshi Fukada

Naoki Makita

Misako Nakazawa

Kaoru Koyanagi

Shinji Imatou

Mitsunori Tsuchiya

Kazuhisa Nakashita

Atsushi Kawano

Yasuhiko Takemura

Hideaki Kuwabara

Junya Maruyama

Hiroki Adachi

Yumiko Ohno

Masakazu Murakami

Takashi Inushima

Minoru Miyazaki

Norihiko Seo

Kenji Itou

Setsuo Nakajima

Yuji Kawasaki

Masahiko Sato

Hongyong Zhang

Ippei Kobayashi

Hideomi Suzawa

Hideto Ohnuma

Takeshi Nishi

Mitsuhiro Ichijo

Shigenori Hayashi

Toshimitsu Hagiwara

Takahiro Fukutome

Naoya Sakamoto

Tomoyuki Aoki

Mitsufumi Codama

Naoki Hirose

Nobumitsu Amachi

Noriya Ishida

Junichi Takeyama

Mari Sasaki

Shinji Imato

Hitoshi Kondou

Mitsunri Sakama

Hiroyuki Yajima

Shupei Yamazaki

A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor

Active matrix light-emitting device with overlapping electroluminescent layers

The lighting device includes a first resin layer having a first refractive index and a second resin layer having a second refractive index lower than the first refractive index and higher than the refractive index of the air, which are over a light-emitting element layer, a plurality of granules provided at the interface between the first resin layer and the second resin layer and each having the second refractive index or a plurality of projections each having an apex provided inside the first resin layer and a flat surface in contact with the interface between the first resin layer and the second resin layer and having the second refractive index, an uneven structure provided at the interface with the air, and a resin substrate having the second refractive index.

Lighting device and method for manufacturing the same

(OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

Semiconductor device and manufacturing method thereof

The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

Semiconductor device and method for fabricating the same

A method for manufacturing an electronic device comprising a terminal provided with a conductor which penetrates a cured prepreg is provided. At least one opening is formed in the prepreg. The prepreg is attached to a substrate over which an electronic element is formed so that the conductor included in the terminal overlaps with the opening. A conductive paste is provided in a region of the prepreg where the opening is provided. Part of the conductive paste flows into the opening to be in contact with the conductor included in the terminal. Then, heat treatment is performed so that the conductive paste and the prepreg are cured. In the process for manufacturing the terminal, it is not necessary to perform a step of forming an opening with a laser beam after the prepreg is cured. Thus, an adverse effect of a laser beam on the electronic element can be eliminated.

Terminal structure, electronic device, and manufacturing method thereof

There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

Apparatus and method for doping

A conductor having a projecting portion is formed which forms a terminal portion. An uncured prepreg including a reinforcing material is closely attached to the conductor and the prepreg is cured to form an insulating film including the reinforcing material. When the prepreg is closely attached, the prepreg is stretched by the projecting portion, so that a region of the prepreg, which is closely attached to the conductor, can be thinner than the other region of the prepreg. Then, by reducing the thickness of the entire insulating film, an opening can be formed in the portion having a smaller thickness. The step of reducing the thickness can be performed by etching. Further, it is preferable not to remove the reinforcing material in this step. The strength of a terminal and an electronic device can be increased by leaving the reinforcing material at the opening.

Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof

To provide a method for forming an opening with high accuracy in an insulating film obtained by curing a prepreg including a reinforcing material in a step of exposing a terminal portion sealed with the insulating film, with the use of a means other than laser beam irradiation. A protrusion is formed using a conductor. An uncured prepreg including a reinforcing material is closely attached to the protrusion and the prepreg is cured, so that an insulating film including the reinforcing material is formed. A portion of a top surface of the insulating film protrudes due to the protrusion. The protruding portion is preferentially removed together with the reinforcing material to form an opening in the insulating film by grinding treatment or the like, so that an opening which exposes the protrusion is formed in the insulating film.

Method for manufacturing electronic device

Semiconductor device including magnet

Growing community of inventors

Kanagawa, Japan

Toshiji Hamatani