Tokyo Electron Limited

Toshiji Abe

Hiroyuki Matsuura

Tadashi Enomoto

Toshiki Takahashi

Barry Clarke

Makoto Saito

Mitsuru Yamazaki

Jattie Van Der Linde

Kazuyoshi Sugawara

Disclosed is a magnetic annealing apparatus including a processing container that performs a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a substrate holder that holds the plurality of substrates substantially horizontally in the processing container; a division heater including a plurality of sub-division heaters and covering a substantially entire circumferential surface of an outer periphery of a predetermined region of the processing container along a longitudinal direction; a magnet installed to cover an outside of the division heater; and a controller configured to feedback-control a temperature of a predetermined control target heater among the plurality of sub-division heaters, and to control temperatures of the plurality of sub-division heaters other than the predetermined control target heater based on a control output obtained by multiplying a control output of the predetermined control target heater and a predetermined ratio.

Magnetic annealing apparatus and magnetic annealing method

A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamberconfigured to be capable of being vacuumed, an object holding meansadapted to hold the object to be treated, a high frequency power sourceadapted to generate high frequency voltage, a plasma gas supplying meansadapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodesB connected to the output side of the high frequency power source via wiringsto generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching meansis provided in the middle of the wirings. In this case, each of the plasma electrodesA,B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.

Plasma treating apparatus

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Iwate, Japan

Toshiji Abe