Hitachi Power Semiconductor Device, Ltd.

Toshihito Tabata

Toshiaki Morita

Tomoyasu Furukawa

Daisuke Kawase

A semiconductor device including: a semiconductor element; and a first electrode formed on a first surface of the semiconductor element. The first electrode has a stacked structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains nickel (Ni) and phosphorus (P) as a composition. A phosphorus (P) concentration of the first electroless Ni plating layer is 2.5 wt % to 6 wt % inclusive, and a crystallization rate of NiP in the first electroless Ni plating layer is 0% to 20% inclusive.

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Hitachi, Japan

Toshihito Tabata