The Furukawa Electric Co., Ltd.

Toshihito Suzuki

Kazuaki Kiyota

Keishi Takaki

Yasumasa Kawakita

Tatsuro Kurobe

Hiroyuki Ishii

Hitoshi Shimizu

Maiko Ariga

Yusuke Inaba

Go Kobayashi

Masayoshi Nishita

Suguru Imai

A semiconductor optical integrated device in which a forward-bias optical device and a semiconductor laser are monolithically integrated on a semiconductor substrate, includes: a passive waveguide portion that is arranged between the forward-bias optical device and the semiconductor laser; and a ground electrode that is arrange on a lower surface of the semiconductor substrate. Further, the semiconductor laser includes a mirror having a length on a side closer to the forward-bias optical device, the forward-bias optical device includes a forward-bias optical-device electrode on a side opposite to a side in contact with the semiconductor substrate, the passive waveguide portion includes a passive waveguide electrode on a side opposite to a side in contact with the semiconductor substrate, and the passive waveguide electrode is electrically connected to the ground electrode.

Semiconductor optical integrated device

A laser module that can suppress influence due to a reflected light between chips is provided. A laser moduleaccording to one embodiment of the present invention includes: a laser elementprovided on a first substrate and having a laser oscillation unit that generates a laser light and a first optical waveguide that guides the laser light; and an optical amplifierprovided on a second substrate and having a second waveguide that guides the laser light. The first optical waveguide is nonparallel relative to an end face of the first substrate and connected thereto, the second optical waveguide is nonparallel relative to an end face of the second substrate and connected thereto, and the first substrate and the second substrate are arranged such that the laser light output from the first optical waveguide is optically coupled to the second optical waveguide.

Laser module

A disclosed semiconductor laser device includes a distributed feedback portion serving as a light-emittable active region the distributed feedback portion having a diffraction grating; and a distributed reflective portion serving as a passive reflective mirror, the distributed reflective portion having a diffraction grating, wherein the distributed feedback portion includes a first region adjacent to the distributed reflective portion and having a diffraction grating having a predetermined standard period, a phase shift region adjacent to the first region, the phase shift region being longer by twice or more than the standard period, and a second region adjacent to an opposite side to the first region of the phase shift region and having a diffraction grating with the standard period, and the phase shift region optically changes a phase of laser beam between the first region and the second region.

Semiconductor laser device

A semiconductor laser apparatus includes a semiconductor optical integrated device including a semiconductor laser array including a plurality of semiconductor laser elements, a semiconductor arrayed waveguide grating, made of a semiconductor, including an inputting slab waveguide connected to the plurality of the semiconductor laser elements, an array waveguide connected to the inputting slab waveguide and including a plurality of waveguides having different lengths from each other and arranged in a parallel manner, and an outputting slab waveguide connected to the array waveguide; a substrate on which the semiconductor laser array and the semiconductor arrayed waveguide grating are monolithically integrated; and an output facet outputting a laser light emitted from the semiconductor laser elements and including an output end of the outputting slab waveguide.

Semiconductor laser apparatus

An optical semiconductor apparatus includes: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point. The arrayed waveguide grating is configured to combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating.

Optical semiconductor apparatus

Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.

Laser device, method of manufacturing the same, laser device array, light source and light module

Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.

Growing community of inventors

Tokyo, Japan

Toshihito Suzuki