Hitachi, Ltd.

Nippon Telegraph and Telephone Public Corporation

Other

Hitachi Device Engineering Co., Ltd.

Cube It Limited

Toshihisa Tsukada

Hideaki Yamamoto

Akira Sasano

Yasuo Tanaka

Toru Baji

Haruo Matsumaru

Yukio Takasaki

Eiichi Maruyama

Ken Tsutsui

Yoshiyuki Kaneko

Tadaaki Hirai

Norio Koike

Yasuharu Shimomoto

Hitoshi Kume

Kazuhiro Komori

Satoshi Meguro

Takaaki Hagiwara

Kazuo Shirahashi

Yuka Matsukawa

Yoshinori Imamura

Makoto Matsui

Saburo Ataka

Toshihiro Tanaka

Toshio Nakano

Iwao Takemoto

Masaharu Kubo

Koichi Seki

Tetsuo Adachi

Toshiaki Nishimoto

Shusaku Nagahara

Sachio Ishioka

Tadashi Muto

Kiyohisa Inao

Toshiko Koizumi

Hideto Kanamori

Susumu Takahashi

Yasunari Umemoto

Yoshihiro Shiroishi

Yoshito Tsunoda

Satoshi Nakamura

Naoki Chinone

Takeshi Wada

Kiichi Ueyanagi

Yoshiaki Kamigaki

Toshiyuki Akiyama

Hisashi Nakamura

Shinya Ohba

Shigeru Shimada

Muneaki Yamaguchi

Kyo Akagi

Yoshizumi Eto

Tetsuya Nakagawa

Yasuhiro Shiraki

Hiroaki Inoue

Shigeki Kitajima

Toshiyuki Usagawa

Haruhisa Ando

Yoshiaki Mori

Chushirou Kusano

Yoshifumi Katayama

Hiroko Sukeda

Kiyofumi Uchibori

Toshimitsu Miyauchi

Hideaki Takano

Ryoichi Ito

Yasutsugu Takeda

Kouichi Seki

Eizou Ebisui

Yuji Izawa

Hisao Ohta

Naohiko Koizumi

Hiroya Inagaki

A folding hanger includes of a pair of arms and a hook. Above-mentioned pair of arms and the hook have a common axis of rotation and each arm of the arms is structured by two parallel boards and an intermediate board connecting the two parallel boards. An angle between the center line of the arm and an edge line, which passes through the common axis of rotation and an edge of the intermediate board, is set between 50 degrees and 80 degrees.

Folding hanger

A magnetic disk unit of form factor size with a low power consumption, a short average seek time and a high performance. The unit includes at least two spindles for supporting and rotating magnetic disks. Specifically, two 1.3-inch disks, three 1.0-inch disks or four 0.7-inch disks are arranged in a housing originally intended for a 1.8-inch magnetic disk. The unit further includes a device for writing and reading information while selecting a spindle. The card-type disk unit thus can be reduced in thickness, with a smaller power consumption for starting the disk rotation and further with an improved average seek velocity.

Disk drive unit having multiple disks arranged in a plane

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

Thin film transistor substrate, manufacturing method thereof, liquid

An electronic interpreter for interpreting sentences between a first person and a second person. The electronic interpreter includes a memory for storing sentence data in a data structure having a plurality of sets of sentences including translations of the sentences, wherein each sentence of each set of sentences is linked to another of the sets of sentences, and a data processing unit. The data processing unit retrieves a set of sentences from the memory in response to a keyword input from the first person using an input device, displays the set of sentences on a display, selects a sentence from the set of sentences in response to an input from the first person using the input device, displays a translation of the selected sentence on the display along with another set of sentences linked to the selected sentence, selects a sentence from the another set of sentences in response to an input from the second person using the input device, displays a translation of said selected sentence on the display along with another set of sentences linked to the selected sentence, and repeats all of the previous operations continually until a keyword has been input from the first person using the input device.

Electronic interpreter utilizing linked sets of sentences

An optical switch has an input optical waveguide and an output optical waveguide that are physically and optically separated from each other by a two-level crossing arrangement. The direction of optical signal propagation is switchable by a connecting optical waveguide to provide optical coupling between the input and output optical waveguides. Crosstalk and loss due to diffraction at each crossing are small, and insertion loss does not increase, even for a large-scale application.

Optical switch having a two-level crossing between input/output optical

In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

Method of making an EPROM with peripheral transistor

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.

Method of manufacturing a thin film transistor substrate

Thin film transistor substrate, liquid crystal display panel and liquid

Method of manufacturing EEPROM memory device

A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.

Thin-film device

A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

Thin film phototransistor and photosensor array using the same

This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carriers be easily generated and to thereby improve writing efficiency.

Semiconductor memory device

Growing community of inventors

Musashino, Japan

Toshihisa Tsukada