Yamaha Corporation

Denso Corporation

Murata Manufacturing Co., Ltd.

Toshihisa Suzuki

Hiroshi Saitoh

Shingo Sakakibara

Yasutoshi Suzuki

Inao Toyoda

Hirofumi Uenoyama

Yuichiro Murata

Kiyoshi Natsume

Osamu Mochizuki

Hideki Sato

Masayoshi Omura

Makoto Kaneko

Nariyasu Yaguchi

Yukitoshi Suzuki

Naoshi Horiai

Kazushi Sakurauchi

Junya Suzuki

Yuusaku Ebihara

Koji Ogata

A first sensor section installed in an acceleration sensor employs a first elastic member which is elastically movable according to acceleration in the first and third directions and is stiff against acceleration in second direction so as to restrict elasticity in second direction. Thereby, the first sensor section is provided as a biaxial acceleration sensor which detects the first and third directional acceleration according to a change of electrostatic capacity between a first weight (i.e. the first movable electrode) made movable according to acceleration and the first fixed electrode. A second sensor section installed in the acceleration sensor is structurally identical with the first sensor section and configured to detect acceleration in second and third directions. Thereby, such combination of the first sensor section and the second sensor section constitutes a three-dimensional acceleration sensor.

Acceleration sensor for detecting acceleration in three directions

An acceleration sensor achieving improvement of sensitivity and comprehensive miniaturization as a device includes a first sensor. The first sensor is furnished with an electrostatic capacitor that is configured such that a first fixed electrode, a second fixed electrode and a movable electrode are intensively arranged in a row. In the electrostatic capacitor, the first fixed electrode, the second fixed electrode and the movable electrode are arranged adjoining one another in acceleration detection direction (y-axis direction) at a position corresponding to the center of a weight in a plane view of a substrate. At one of longitudinal-side's ends of each electrode (one of ends in x-axis direction), connectors are provided so as to connect the first fixed electrode and the second fixed electrode to the substrate by connectors.

Acceleration sensor having a capacitor array located in the center of an inertial mass

A condenser microphone includes a substrate having a cavity, first and second spacers defining an opening, a diaphragm having a rectangular shape positioned inside of the opening, and a plate having a rectangular shape positioned just above the diaphragm. Plate joint portions integrally interconnected with two sides of the plate are directly attached onto the second spacer. Supports, which are attached onto the second spacer across the opening and project inwardly of the opening, are connected to the prescribed portions of the diaphragm via third spacers relatively to the other two sides of the plate. The center portion of the diaphragm can be designed in a multilayered structure, and the peripheral portion can be bent outwardly. In addition, both ends of the diaphragm are fixed in position, while free ends of the diaphragm vibrate due to sound waves.

Condenser microphone

A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.

Semiconductor device and manufacturing method thereof

An electroacoustic transducer serving as a speaker or a microphone is reduced in size and weight and is capable of generating sound with relatively high sound pressure. It is constituted of a housing having a cavity having an opening in the exterior, a fixed electrode positioned opposite to the opening of the housing, a diaphragm having an electrode positioned between the opening and the fixed electrode, and an elastic deformation portion for supporting the diaphragm with respect to the housing and for allowing the diaphragm to vibrate in the thickness direction. The fixed electrode is electrically insulated from the electrode of the diaphragm. The diaphragm is distanced from the fixed electrode by means of the elastic deformation portion placed in the balanced state. When the elastic deformation portion is subjected to elastic deformation, the diaphragm vibrates with relatively large amplitude such that it comes in contact with the fixed electrode.

Electroacoustic transducer

A semiconductor microphone unit includes a semiconductor microphone chip having a diaphragm covering an inner hole of a support. The support is adhered onto the surface of a support substrate whose thermal expansion coefficient higher than the thermal expansion coefficient of the support via a thermosetting adhesive in such a way that the diaphragm is positioned opposite to the surface of the support substrate. The thermosetting adhesive has a tensile elastic modulus allowing a contraction of the support substrate to be transmitted to the support in a hardened state when the semiconductor microphone chip is cooled together with the support substrate. Thus, it is possible to reduce the tensile stress of the diaphragm, which occurs during the manufacturing of the semiconductor microphone chip, thus preventing the diaphragm from being unexpectedly reduced in strength; hence, it is possible to improve the sensitivity of the semiconductor microphone chip.

Semiconductor microphone unit

A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.

Semiconductor device

Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni&#x2014;Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni&#x2014;Fe alloy having a Ni content of 69% or less.

Method for manufacturing magnetic sensor

In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devicesemploying a laminated structure comprised of antiferromagnetic film, lower magnetic layer, barrier filmand upper magnetic layerare independently and separately formed by ion beam etching on a lower electrodeand in common with said lower electrodeprovided on a substrate. A pair of independent upper electrodesare formed on upper magnetic layer. As a result, a pair of magnetic tunnel resistance devicesare formed connected in series on substrate

Magnetic resistance device

Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni&mdash;Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni&mdash;Fe alloy having a Ni content of 69% or less.

Magnetic sensor and manufacturing method therefor

A magnetic sensor comprises a thin-film-like magnetic tunnel effect element (magnetoresistive effect element) . A coil is disposed in a plane under the magnetic tunnel effect element and parallel to a thin-planar film surface of the element. The coil is a double spiral type coil which includes a first spiral conductor portion - and a second spiral conductor portion - . The magnetic tunnel effect element is disposed between a spiral center P of the first conductor portion - and a spiral center P of the second conductor portion - in a plan view. The first and second conductor portions - and - are connected such that electric currents in the same direction pass through a part of the first conductor portion - that overlaps the magnetic tunnel effect element in a plan view and through a part of the second conductor portion - that overlaps the magnetic tunnel effect element in a plan view.

Magnetic sensor

A gate electrode material film is deposited on a substrate and formed with an opening for each pixel area, and thereafter a first insulating film and an emitter electrode material film are deposited. Slits for separation of emitter lines are formed by etching the emitter electrode material film at the area intersecting with gate lines to be later formed. Thereafter, a second insulating film is deposited and an element substrate is adhered to the second insulating film to remove the initial substrate. The gate electrode material film is thereafter patterned to form a plurality of gate lines and the emitter electrode material film is patterned to form a plurality of emitter lines.

Growing community of inventors

Hamamatsu, Japan

Toshihisa Suzuki