Toray Industries, Inc.

Toshihisa Nonaka

Koichi Fujimaru

Takeshi Arai

Daisuke Kanamori

Hiroyuki Igaki

Keisuke Kobayashi

Yoshitake Hara

Michiyasu Matsuki

Hideo Nakakuki

Yoshiko Tatsuta

Yoichi Shimba

Takuro Oda

Gentaro Ohbayashi

Kusato Hirota

Kunihisa Nagino

Tsukuru Mizuguchi

Manabu Kawasaki

Yoichi Shinba

Yuka Yamashiki

Kazuyuki Matsumura

Hiroyuki Niwa

Akira Shimada

Noboru Asahi

Yasuko Tachibana

The objective of the present invention is to obtain a semiconductor resin composition having a sufficiently low coefficient of linear expansion of the cured product thereof and a uniform distribution of inorganic particles in the direction of film thickness of a produced semi-cured film thereof. The semiconductor resin composition, which contains (a) an epoxy compound, (b) inorganic particles, (c) a polyimide, and (d) a solvent, is characterized by further containing (e) rubber particles and by the fraction of the (b) inorganic particles in the weight of the total solid fraction resulting from subtracting the weight of the (d) solvent from the total weight of the semiconductor resin composition being 60-92 wt % inclusive.

Semiconductor resin composition, semiconductor resin film, and semiconductor device using the same

Provided is a resin sheet, wherein in a stress measurement in which a dynamic shear strain is applied in a direction parallel to a surface, the difference between a loss tangent as measured when a strain amplitude is 10% of the sheet thickness and a loss tangent as measured when the amplitude is 0.1% is equal to or greater than 1 at a temperature of 80&#xb0; C. and a frequency of 0.5 Hz. The resin sheet of the present invention can provide a semiconductor device with excellent connection reliability, wherein air bubbles and cracks are less likely to occur in the resin sheet. In the resin composition of the present invention, aggregates are less likely to occur during storage. The resin sheet obtained by forming the resin composition into a sheet has good flatness. The hardened material thereof can provide a circuit board or a semiconductor device with high connection reliability.

Resin composition, resin sheet, and production method for semiconductor device

The present invention provides an adhesive composition having excellent strength in a cracked state, and is an adhesive composition characterized by containing a polyimide (A),a polyfunctional epoxy compound (B), an epoxy curing agent (C), and inorganic particles (D), the ratio of the polyimide (A) in a nonvolatile organic component being 3.0 wt % or more and 30 wt % or less, the ratio of the epoxy curing agent (C) in the nonvolatile organic component being 0.5 wt % or more and 10 wt % or less, and T/M being 400 or more and 8000 or less, where T is the total number of grams of the nonvolatile organic component, and M is the number of moles of epoxy groups in the nonvolatile organic component.

Adhesive composition and adhesive film having same, substrate provided with adhesive composition, and semiconductor device and method for manufacturing same

The present invention relates to an adhesive agent which can be used in the mounting of a semiconductor chip on a circuit board or the like. The present invention addresses the problem of providing an adhesive agent having both excellent storage stability and excellent connection reliability. A means for solving the problem is an adhesive agent comprising (a) a polyamide, (b) an epoxy compound and (c) an acid-modified rosin.

Adhesive agent having a polyimide and acid modified rosin

A paste composition containing an inorganic filler, a resin and a solvent, wherein the paste composition is characterized in that it contains one or more solvents of which the boiling point is 160&#xb0; C. or higher and an inorganic filler of which the mean particle diameter is 5 &#x3bc;m or smaller, and the total content of the solvent is 25 wt % or less based on the total amount of the paste composition, and a dielectric composition containing an inorganic filler and resin, wherein the inorganic filler includes inorganic fillers of at least two kinds of mean particle diameter, and the greatest mean particle diameter of said mean particle diameters is 0.1-5 &#x3bc;m and is 3 times or more the minimum mean particle diameter.

Paste composition and dielectric composition using the same

An adhesive composition for semiconductor containing an organic-solvent-soluble polyimide (a), an epoxy compound (b) and a hardening accelerator (c), wherein per 100 wt parts of the epoxy compound (b), there are contained 15 to 90 wt parts of the organic-solvent-soluble polyimide (a) and 0.1 to 10 wt parts of the hardening accelerator (c), wherein the epoxy compound (b) contains a compound being liquid at 25&#xb0; C. under 1.013&#xd7;10N/mand a compound being solid at 25&#xb0; C. under 1.013&#xd7;10N/m, and wherein a ratio of compound being liquid based on all the epoxy compounds is 20 wt % or more and 60 wt % or less.

Adhesive composition for semiconductor, semiconductor device making use of the same and process for producing semiconductor device

The present invention relates to a high dielectric constant paste composition comprising (A) inorganic particles having a perovskite crystal structure or a complex perovskite crystal structure, (B) a compound represented by any one of the general formulas (1) to (4) shown below, and (C) an organic solvent. The present invention provides a high dielectric constant paste composition for producing a high dielectric constant dielectric composition which has high insulation reliability and exhibits satisfactory resistance in a high-temperature high-humidity bias test. 

High dielectric constant paste composition and dielectric composition using the same

The present invention is an optical waveguide-forming paste composition including (A) barium sulfate particles with a mean particle diameter of 1 nm or more to 50 nm or less, (B) a compound having a polymerizable group and a carboxyl group, or a phosphoric ester compound having a polymerizable group, and (C) an organic solvent.

Paste composition for light guide and light guide utilizing the same

This invention is a resin composition for optical wiring, comprising an inorganic filler with an average particle size of 1 nm to 100 nm and a resin, having a ratio n/n(where nis the refractive index of the inorganic filler and nis the refractive index of the resin) of 0.8 to 1.2, a thermal expansion coefficient of &#x2212;1&#xd7;10/&#xb0; C. to 4&#xd7;10/&#xb0; C., and a true dependency value of its refractive index on the temperature of &#x2212;1&#xd7;10/&#xb0; C. to 1&#xd7;10/&#xb0; C. in a temperature range from &#x2212;20&#xb0; C. to 90&#xb0; C., and substantially incapable of absorbing light in a wavelength range from 0.6 to 0.9 &#x3bc;m or from 1.2 to 1.6 &#x3bc;m. This invention also provides an optoelectronic circuit board.

Resin composition for optical wiring, and optoelectronic circuit board

Optical recording medium and optical recording apparatus

A rewritable phase change type optical recording medium having excellent in storage durability such as archival property and overwrite shelf property and is less likely to have increased jitters, lower contrast and bursting due to deterioration by repeated overwriting is disclosed. The optical recording medium comprises a first dielectric layer, a first boundary layer and a recording layer, in tis order, wherein the first boundary layer is in contact with the recording layer. The information in the optical recording medium can be recorded, erased and reproduced by irradiating the recording layer with light. The recording and erasure of information are affected by reversible phase change between amorphous phase and crystalline phase of the recording layer. The first boundary layer comprises a material comprising an oxide, a carbide, a nitride of one or more elements (excluding carbon) belonging to a group 3A through group 6B of the 2 period through the 6 period in the periodic table; carbon; or a compound with carbon and oxygen and/or nitrogen.

Optical recording medium

Optical recording media and their production methods

A solution for forming a superconductive thin film prepared by dissolving a mol of a compound selected from group A consisting of alkoxides and alkoxyalkoxides of a rare earth metal element; b mol of a compound selected from group B consisting of alkoxides and alkoxyalkoxides of Ba, Sr and Ca; and c mol of a compound selected from group C consisting of alkoxides and alkoxyalkoxides of Cu in e liter of a compound selected from group E, a solvent selected from alcohols together with d mol of a compound selected from group D for inhibiting hydrolysis action such as an amine, a ketone and a glycol, such that the following relationships:

Organometallic solutions for forming oxide superconducting films

A solution for forming a superconductive thin film prepared by dissolving a mol of a compound selected from group A consisting of alkoxides and alkoxyalkoxides of a rare earth metal element; b mol of a compound selected from group B consisting of alkoxides and alkoxyalkoxides of Ba, Sr and Ca; and c mol of a compound selected from group C consisting of alkoxides and alkoxyalkoxides of Cu in e liter of a compound selected from group E, a solvent selected from alcohols together with d mol of a compound selected from group D having hydrolysis inhibitory action such as an amine, a ketone and a glycol, such that the following relationships:

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Otsu, Japan

Toshihisa Nonaka