Fujitsu Corporation

Toshihisa Higashiyama

Akira Takashima

Fumihiko Taniguchi

Haruo Kojima

Hidehiko Akasaki

Koji Honna

Kazunari Kosakai

The semiconductor device includes a semiconductor chip, an FPC tape for mounting the semiconductor chip thereto, a mold resin for protecting the semiconductor chip, and metal balls provided on the FPC tape for connecting the semiconductor chip to a circuit board. The mold resin has the glass transition temperature not lower than 200.degree. C., the coefficient of linear expansion in the range from 13 to 18 ppm/.degree. C., and Young's modulus in the range from 1500 to 3000 kg/mm.sup.2, whereby warpage of the semiconductor device is mitigated. The semiconductor device can also include a buffer layer. The semiconductor device can be manufactured by collectively molding a plurality of semiconductor chips mounted to the FPC tape and by cutting the molded article into individual semiconductor packages.

Resin molded semiconductor device and method of manufacturing

A semiconductor device includes an insulating substrate; a semiconductor chip mounted on a front surface of the insulating substrate and provided with electrode pads; bonding pads provided on the front surface of the insulating substrate and electrically connected to the semiconductor chip by means of wires; ball bumps provided on a back surface of the insulating substrate in rows in a grid-like manner; electrode patterns provided in rows on the front surface of the insulating substrate so as to correspond to positions of the ball bumps, respectively, the electrode patterns being connected to the ball bumps through holes formed in the insulating substrate; and interconnection patterns electrically connecting the bonding pads and the electrode patterns. The bonding pads may be provided in a plurality of rows, each of the rows being provided between one of neighboring pairs of rows of the electrode patterns. Alternatively, the bonding pads may be provided in a staggered manner between one of neighboring pairs of rows of the electrode patterns.

Semiconductor device having an insulating substrate

Growing community of inventors

Kasugai, Japan

Toshihisa Higashiyama