Kioxia Corporation

Toshiba Memory Corporation

Toshihiro Yagi

Yohei Yasuda

Hidefumi Kushibe

A semiconductor device of an embodiment includes a buffer configured to perform data transmission by turning on and off a first output transistor group and a second output transistor group; a first correction circuit configured to calibrate a resistance value of the buffer by controlling an on-off state of each of first transistors of the first output transistor group; a second correction circuit configured to calibrate the resistance value of the buffer by controlling an on-off state of each of second transistors of the second output transistor group; and a control circuit configured to cause the calibration by the first correction circuit to be performed in a non-communication duration other than a duration of data transmission from the buffer and cause the calibration by the second correction circuit to be performed in a duration other than a duration of the calibration by the first correction circuit.

Semiconductor device and memory device

A semiconductor integrated circuit of embodiments includes a first MOS transistor configured to control conduction and non-conduction between a reference voltage point and a node, a second MOS transistor connected to the first MOS transistor via the node and configured to apply a voltage equal to or lower than a withstand voltage of the first MOS transistor to the node, a third MOS transistor configured to receive supply of a second voltage higher than the first voltage, and output an output signal of a signal level corresponding to a voltage range of the second voltage, and a switch circuit configured to make a voltage of the node a fixed voltage when the first MOS transistor is in an OFF state.

Semiconductor integrated circuit

According to one embodiment, a data transmission device includes a buffer circuit configured to set a voltage level of a data signal to high or low, a power supply line for supplying a power supply voltage to the buffer circuit, a buffer control circuit configured to control a switching operation of the buffer circuit, a current circuit configured to make a dummy current flow to the power supply line, and a current control circuit configured to control the dummy current based on one of the set voltage level and a transmission timing of the data signal.

Data transmission device

According to one embodiment, in a first differential amplifier circuit of a semiconductor device, a first transistor receives an input signal at the gate. A second transistor forms a differential pair with the first transistor. The second transistor receives a reference signal at the gate. A third transistor is connected in series with the first transistor. A fourth transistor is connected in series with the second transistor. A fifth transistor is disposed on the output side. The fifth transistor forms a first current mirror circuit with the fourth transistor. A sixth transistor is connected to the drain of the second transistor in parallel with the fourth transistor. The sixth transistor forms a second current mirror circuit with the fifth transistor. A first discharge circuit is connected to the source of the sixth transistor.

Semiconductor device and memory system

According to one embodiment, in a level shift circuit, a first PMOS transistor is electrically connected at a gate to a first node to which a first signal having an amplitude to be a first power-supply potential is input, is electrically connected to a second node at a source, and is electrically connected at a drain to an output terminal from which a signal having an amplitude to be a second power-supply potential is output. The first NMOS transistor is electrically connected to the first node at a gate and is electrically connected to the output terminal at a drain. The second PMOS transistor is electrically connected to a node to be the second power-supply potential at a source, and is electrically connected to the second node at a drain. The potential adjusting circuit is electrically connected to at least the second node.

Growing community of inventors

Yokohama, Japan

Toshihiro Yagi