Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Other

Mitsubishi Denki Kabushiki Kaisha

Ebara Corporation

Riken Corporation

Solid State Storage Solutions LLC

Mitsubishi Electric Corporation

Japan Science and Technology Agency

Hitachi Ulsi Engineering Corp.

Toshihiro Tanaka

Yutaka Shinagawa

Masataka Kato

Kazufumi Suzukawa

Hitoshi Kume

Masamichi Fujito

Takashi Yamaki

Toshio Sasaki

Katsutaka Kimura

Tetsuo Adachi

Nozomu Matsuzaki

Akira Kato

Hiroyuki Tanikawa

Digh Hisamoto

Kan Yasui

Daisuke Okada

Yukiko Umemoto

Mitsuru Hiraki

Kozo Katayama

Yasushi Ishii

Yoshiaki Kamigaki

Shinichi Minami

Toshikazu Matsui

Tsutomu Okazaki

Kyoya Nitta

Kazuyoshi Shiba

Hidenori Ishioka

Katsuyuki Aoki

Kazuaki Isono

Hideaki Nagatomo

Seiji Kubo

Masatsugu Hori

Aritoshi Iida

Kazumasa Yanagisawa

Satoru Hanzawa

Yoshiki Kawajiri

Fumihiko Nitta

Eiichi Ishikawa

Takeshi Kataoka

Yasuo Imaki

Koichi Ozaki

Yusuke Nakamura

Yasuhiro Taniguchi

Kiyoshi Matsubara

Kazuyoshi Oshima

Kazuyuki Miyazawa

Osamu Tsuchiya

Takayuki Oshima

Toshiaki Nishimoto

Masashi Wada

Kiichi Makuta

Sonoko Abe

Isao Nakamura

Yozo Ohnishi

Masahiko Kimura

Toshio Nakano

Hideaki Yamamoto

Toshihisa Tsukada

Akira Sasano

Koichi Seki

Tetsuya Ishimaru

Tetsuya Tsujikawa

Kan Takeuchi

Yasuharu Shimomoto

Katsufusa Tanaka

Fumiaki Tsuchiya

Haruyuki Hasegawa

Akikazu Matsumoto

Tomofumi Tezuka

Naoyuki Nakatsukasa

Isao Funayama

Ayako Kakuda

Yoshinobu Nakagome

Atsushi Ohba

Keiichi Yoshida

Hiroaki Kotani

Takeshi Wada

Atsushi Nozoe

Yuichiro Nakamura

Takanori Yamazoe

Yasuhiro Nakamura

Kazunori Furusawa

Tadashi Muto

Masahiro Tanaka

Yuji Tsukamoto

Hiroyuki Umemura

Shigeru Tanaka

Toru Ito

Mitsuru Imai

Kouichi Ozaki

Yoshiaki Tanimura

Takayuki Yoshitake

Nobutaka Nagasaki

Takeo Kanai

Kazuaki Shimamura

Kouichi Seki

Satoshi Konishi

Sota Nakagawa

Servomotor

A stator includes an insulator, a wire, a stator core, a cylindrical hollow terminal through which the stator is to be electrically connected, and a resinous molding material covering the stator core and an outer face of the hollow terminal. An inner face of the hollow terminal is exposed from the molding material, and a first end of the hollow terminal is open to the outside of the molding material.

Stator, motor, and stator manufacturing method

A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.

Semiconductor device

A semiconductor device includes a plurality of nonvolatile memory cells (). Each of the nonvolatile memory cells comprises a MOS type first transistor section () used for information storage, and a MOS type second transistor section () which selects the first transistor section. The second transistor section has a bit line electrode () connected to a bit line, and a control gate electrode () connected to a control gate control line. The first transistor section has a source line electrode () connected to a source line, a memory gate electrode () connected to a memory gate control line, and a charge storage region () disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc&#x3c;tm.

In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The resistive storage element in the memory cell is connected to a bit-line via a contact formed above the resistive storage element. Meanwhile, in the buffer cell, the contact is not formed above the resistive storage element, and a state of being covered with an insulator is kept upon processing the contact in the memory cell. By such a processing method, exposure and sublimation of a chalcogenide film used in the resistive storage element can be avoided.

Semiconductor device and its manufacturing method

Semiconductor device with gate electrodes

Growing community of inventors

Akiruno, Japan

Toshihiro Tanaka