Stanley Electric Co., Ltd

Toshihiro Seko

Kosaburo Ito

Kazuhiko Ueno

Naoto Suzuki

Soji Owada

Takashi Sugiyama

Ryotaro Owada

Shinya Kogure

Takeshi Waragaya

Kazuyuki Yoshimizu

Kenji Akisada

Provided is a vehicular headlight that is capable of generating a clear light distribution pattern using a monolithic array light source of surface emitting lasers. The vehicular headlightincludes a VCSEL array, an image generation unit including a lens arraywhich outputs incident light from the VCSEL arrayas collimated light so that an image of a light distribution pattern as an illuminance distribution is generated on an output side, a light distribution pattern forming unithaving an image forming surface on which the image is formed by the incident light from the image generation unit, and a projection unitoutputting the incident light from the light distribution pattern forming unit to an irradiation region in front of the vehicle.

Vehicular headlight

A light emitting apparatus can include: a first connecting part and a second connecting part connected to each other to form a propagation channel therebetween through which laser beam from a laser light source can propagate, and a power supply cable including a pair of terminals provided in a middle thereof and connected to and separated from each other. One of the terminals can be included in the first connecting part and the other thereof can be included in the second connecting part. When the first connecting part and the second connecting part are connected to each other, the terminals can be connected to each other to constitute a supply channel configured to supply drive power to a driving circuit. When the first and second connecting parts are disconnected, the connected terminals can be separated from each other to cut off the supply channel.

Light emitting apparatus and vehicle lighting fixture

A reliable semiconductor light-emitting apparatus and a headlight using the light-emitting apparatus provided with a light source module including a semiconductor light-emitting device and a wavelength converting module including a wavelength converting layer. The wavelength converting module can include a base having a mounting board, which mounts the wavelength converting layer via metallic bumps, and the base can be configured to attach the light source module directly or via a connecting guide including an optical fiber, and therefore can transmit light emitted from the light-emitting device towards the wavelength converting layer while efficiently radiating heat generated from the wavelength converting layer. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting apparatuses having a high thermal resistance that can emit various color lights having favorable optical characteristics, which can also include the optical fiber, and which can be used for the headlight that can provide a favorable light distribution pattern.

Semiconductor light-emitting apparatus and vehicle headlight

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Semiconductor light-emitting device for producing wavelength-converted light and method for manufacturing the same

There is provided a method for producing a light emitting device having a small light emitting area and showing high light extraction efficiency. An uncured resin' is dropped on either one or both of a light emitting elementand a tabular memberin such an amount that the resin is maintained on them by surface tension, the light emitting elementand the tabular memberare piled up with the uncured resin&#x2032; maintained between them and on a side of the light emitting element by surface tension of the uncured resin&#x2032; to form an uncured resin layer&#x2032; having an inclined side, and then the resin layeris cured. The tabular member is constituted with a material having an alkali metal oxide content of 0.2% by weight or lower.

Light-emitting device having fluorescent substance particles and spacer particles, and method for manufacturing the same

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.

Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer formed around the chip, a transparent plate located on the wavelength converting layer and a diffusing reflection member disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate. The device can be configured to improve the linearity of a boundary between the diffusing reflection member and both side surfaces by using the transparent plate, and therefore can be used for a headlight that can form a favorable horizontal cut-off line corresponding to the boundary via a projector lens without a shade.

Semiconductor light-emitting device and manufacturing method

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Semiconductor light emitting device having a reflective material with a side slant surface and method of manufacturing

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.

A first Sn absorption layer is formed on a principal surface of a first substrate, the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A second Sn absorption layer is formed on a principal surface of a second substrate, the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A solder layer made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.

Substrate bonding method and semiconductor device

A method includes forming a light-emission operating layer on a growth substrate; forming a reflection insulating layer on the light-emission operating layer; forming opening portions in the insulating layer; forming a contact portion which has a thickness adapted to flatten the opening portions and has been embedded into the opening portions; forming an electrode layer on the insulating layer and the contact portions; forming a first bonding metal layer on the electrode layer; preparing a supporting substrate in which a second bonding metal layer has been formed; and making the first and second bonding metal layers molten and joined.

Manufacturing method of semiconductor light-emitting apparatus and semiconductor light-emitting apparatus

(a) A first Sn absorption layer () is formed on the principal surface of a first substrate (), the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. (b) A second Sn absorption layer () is formed on the principal surface of a second substrate () the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. (c) A solder layer () made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. (d) The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.

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Tokyo, Japan

Toshihiro Seko