Canon Kabushiki Kaisha

Canon Components, Inc.

Toshihiro Saika

Noriyuki Kaifu

Katsunori Hatanaka

Isao Kobayashi

Tadao Endo

Ihachiro Gofuku

Satoshi Itabashi

Katsumi Nakagawa

Takayuki Ishii

Yoshinori Isobe

Hidemasa Mizutani

Katsuhiko Yamada

Tetsuya Kaneko

Hideyuki Suzuki

Soichiro Kawakami

Masaki Fukaya

Tetsuya Shimada

Nobuko Kitahara

Katsunori Terada

Toshio Kameshima

Tatsundo Kawai

Shinichi Takeda

Masato Yamanobe

Mineto Yagyu

Kouji Tomoda

Naoto Abe

Kazuaki Tashiro

Yoshiyuki Osada

Eiji Sakamoto

Makoto Ogura

In the so-called sky-shot in which reading is performed with a platen cover () open, an output signal of a read image is compared with a white reference value generated from a white reference member (). Only if a value greater than or equal to the white reference value exists in the output signal of the read image, a reading operation to be performed with a light source unit in an image sensor unit () turned off during an original () reading operation is added to each scan line reading operation.

Image reading apparatus, image formation apparatus, image reading method, image formation method, program for causing image reading method to be executed, and program for causing image formation method to be executed

There is provided an image processing apparatus comprising: a sensor including a plurality of pixels each including a light receiving element, and a scanning circuit for reading out signals in time sequence from the plurality of pixels; and a drive circuit which supplies pulses for driving the scanning circuit, wherein the drive circuit is so arranged to output at least a first pulse and a second pulse smaller than the first pulse, the drive circuit supplying the first pulse to the scanning circuit when a first resolution is selected, and supplying the first pulse and the second pulse to the scanning circuit when a second resolution lower than the first resolution is selected.

Image processing apparatus having multiple resolutions

An electronic circuit apparatus comprises an array of M.times.N functional elements, M.times.N switching elements provided in a one-to-one correspondence with the M.times.N functional elements, a shift register having M output lines, and a selector having N select lines. M control lines are commonly connected in units of N elements of the M.times.N switching elements. The M control lines are connected to the M output lines of said shift register. N input and/or output lines are commonly connected in units of M elements of the M.times.N switching elements. The N input and/or output lines are connected to the N select lines of the selector. Transistors constituting the shift register are thin-film transistors. And, transistors constituting the selector are transistors each having an active region consisting of a single-crystal semiconductor.

Electronic circuit apparatus

An image sensor includes a photoelectric conversion unit, a charge storage unit, a switch unit, and a wiring unit, all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.

Photoelectric converter

A photoelectric conversion apparatus is constructed in such an arrangement that a light-source substrate, in which a light source is arranged, and a photosensor are directly mounted on a frame bearing the strength of the main body of an information processing apparatus, the above light-source substrate may be unified with an electric circuit substrate of the information processing apparatus, and the electric circuit substrate has the photosensor and the light source, whereby the size and weight of the apparatus can be further decreased, the freedom of design and engineering design can be improved, and simplification of assembling and improvement in reliability can be achieved.

Photoelectric conversion apparatus and information processing apparatus

An image sensor includes a substrate on which a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element are formed, and a silicon integrated circuit chip for driving the thin-film transistor and processing signals. All externally connected input/output signal lines are extracted through or electrical connections to the silicon integrated circuit chip.

Image sensor

A liquid crystal device has a light source and liquid crystal elements which selectively transmit light emitted by the light source. The liquid crystal device comprises: the light source, being an electroluminescent device, having a transparent electrode disposed on a light output side of the light source, an electrode opposite to the transparent electrode, and an electroluminescence emission layer interposed between the transparent electrode and the opposite electrode; voltage supply means connected to the transparent electrode in order to feed a reference voltage to the transparent electrode; and driving voltage application means for applying a driving voltage to the opposite electrode. The driving voltage application means comprises a separate excitation type driving circuit using the capacitance of the electroluminescent device itself to produce an alternating current, and pulse generating means for generating a pulse responsive to an input signal to turn on and off a switch of the separate excitation type driving circuit. The pulse generating means includes a multivibrator and a capacitor and a resistor determine the width of the pulse.

Electroluminescent device for illuminating a liquid crystal display

There is disclosed a photoelectric conversion element having a photoelectric conversion portion, at least comprising an insulating layer, a photoconductive semiconductor layer provided in contact with said insulating layer, and made of a non-single crystal material containing hydrogen atoms with the base of silicon, first and second electrodes provided in contact with the photoconductive semiconductor layer, and a third electrode provided in contact with the insulating layer. The amount of hydrogen atoms contained in said photoconductive semiconductor layer is made nonuniform in a thickness direction of said layer so that an energy band gap width of said layer changes.

Photoelectric conversion apparatus with band gap variation in the

An image sensor includes a substrate on which are formed a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element, and a silicon integrated circuit chip for driving the thin-film transistor and processing signals. All externally connected input/output signal lines are extracted through or electrically connected to the silicon integrated circuit chip.

A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Method of making a device having a TFT and a capacitor

An information processing apparatus including a photoelectric conversion element having a photoelectric conversion section. The photoelectric conversion section has an insulating layer with first and second opposed surfaces, and a photoconductive semiconductor layer with first and second opposed surfaces and an intermediate region disposed therebetween, the second surface of the semiconductor layer being adjacent to the first surface of the insulating layer. The photoconductive semiconductor layer has a non-monocrystalline matrix of silicon atoms and including hydrogen atoms distributed nonuniformly. A concentration of the hydrogen atoms is greater near the first and second surfaces of the photoconductive semiconductor layer than in the intermediate region, so that an energy band gap width of the photoconductive semiconductor layer varies between the first and second surfaces of said photoconductive semiconductor layer. The photoelectric conversion section also has first and second electrodes electrically connected to the first surface of the photoconductive semiconductor layer, and a third electrode provided at the second surface of the insulating layer and opposite to a site between the first and second electrodes.

Information processing apparatus including a photoelectric conversion

An electroluminescent device comprising a first electrode, a second electrode and an electroluminescence emission zone, the electroluminescence emission zone being made of a first electroluminescence emission layer, a second electroluminescence emission layer, and a transparent electrode which is interposed between the first electroluminescence emission layer and the second electroluminescence emission layer. At least either the first electrode or the second electrode is a transparent electrode. The first electroluminescence emission layer and the second electroluminescence emission layer emit light by applying a driving voltage to the transparent electrode with both the first electrode and the second electrode connected to a power supply for a reference voltage. In an image sensor using such an electroluminescent device as a light source, the electric field produced by the driving signal of the electroluminescent device does not escape outward, presenting no interfering noise to the image sensor. The resulting light quantity is almost double that of devices with only a single electroluminescent layer, substantially enhancing a resulting image. As a result, a high S/N ratio image sensor may be fabricated.

Electroluminescent device

An electroluminescent device comprising a first electrode, a second electrode and an electroluminescence emission zone, the electroluminescence emission zone being made of a first electroluminescence emission layer, a second electroluminescence emission layer, and a transparent electrode which is interposed between the first electroluminescence emission layer and the second electroluminescence emission layer. At least either the first electrode or the second electrode is a transparent electrode. The first electroluminescence emission layer and the second electro luminescence emission layer emit light by applying a driving voltage to the transparent electrode with both the first electrode and the second electrode connected to a power supply for a reference voltage. In an image sensor using such an electroluminescent device as a light source, the electric field produced by the driving signal of the electroluminescent device does not escape outward, presenting no interfering noise to the image sensor. The resulting light quantity is almost double that of devices with only a single electroluminescent layer, substantially enhancing a resulting image. As a result, a high S/N ratio image sensor may be fabricated.

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Hiratsuka, Japan

Toshihiro Saika