Gigaphoton Inc.

Toshihiro Oga

Osamu Wakabayashi

Koichi Fujii

Takamitsu Komaki

A laser device connectable to an exposure apparatus includes a spectrometer configured to generate a measurement waveform from an interference pattern of laser light output from the laser device; and a processor configured to calculate a first spectral waveform indicating a relationship between a wavelength and a light intensity using the measurement waveform, calculate a representative waveform included in a wavelength range of the first spectral waveform, and calculate an evaluation value of the first spectral waveform using a first integration value obtained by integrating, over the wavelength range, a product of a function of a wavelength deviation from the representative wavelength and the light intensity.

Laser device, evaluation method for laser light spectrum, and electronic device manufacturing method

An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.

Electronic device manufacturing method

An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

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Oyama, Japan

Toshihiro Oga