Other

Ushio Denki Kabushiki Kaisha

Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

Shionogi Company Limited

Dna Vec Research Inc.

Renesas Technology Corp.

Ayumi Pharmaceutical Corporation

Fms Co, Ltd.

Toshihiro Nakajima

Satoko Aratani

Tadamitsu Kishimoto

Mamoru Hasegawa

Osamu Yoshie

Takashi Nagasawa

Kazunobu Tachibana

Kazuhiko Shinoda

Kenji Nakamaru

Hisashi Iizasa

Naoko Yagishita

Nobuaki Yoshida

Hidetoshi Fujita

Masanori Kobayashi

Takahiro Inoue

Masaru Fujii

Kenji Ishida

Yoshiyuki Miyamoto

Tomomi Yukumoto

Yuichi Aki

Yoshikazu Yonemitsu

Takeo Matsushima

Yoshiaki Hisamoto

Yoshio Fukayama

Kusuki Nishioka

Yasuji Ueda

Akihiro Iida

Hiroyuki Aono

Kozo Yamagami

Masanori Okazaki

Kazuyuki Tokorozuki

Masanori Hayami

Eiji Ido

Toshiaki Kanenari

Junichi Kinoshita

Hiroyuki Sakakibara

Kenji 202 Seiwahaitsu Nakamaru

Masanori c/o Discovery Research Laboratories Shionogi & Co Ltd Kobayashi

Akihiro c/o Dnavec Research Inc Iida

Mamoru c/o Dnavec Research Inc Hasegawa

Hiroyuki c/o Dnavec Research Inc Sakakibara

Yasuji c/o Dnavec Research Inc Ueda

A light irradiation device includes a first reflective portion that is arranged at a concave inner surface formed so as to have a substantially arcuate shape and that permits wire-like member to be inserted into an interior thereof, at least one light-emitting portion that emits light in such fashion as to be directed toward the wire-like member from a direction which is circumferential with respect to the wire-like member, and a second reflective portion that is formed in planar fashion, at least a portion of the second reflective portion is arranged between an end of the first reflective portion and an end of the light-emitting portion in a direction circumferential with respect to the first reflective portion.

Light irradiation device

To provide a high-quality and high-performance micro-channel device which can be manufactured by a simple method. Provided is a micro-channel device used in analyzing a sample. The micro-channel device includes at least two substrates and an elastic film interposed between the two substrates. The substrates are thermally fused to the elastic film in at least a part thereof. Also provided is a method for manufacturing a micro-channel device used in analyzing a sample. The method includes a surface activation step of activating a joining surface of a substrate and/or an elastic film, a lamination step of laminating the elastic film between at least two of the substrates, and a thermal fusion step of thermally fusing the substrates to the elastic film in at least a part thereof.

Micro-channel device and method for manufacturing micro-channel device

A light irradiation device includes at least one irradiation unit including a reflective surface which is disposed in a concave inner surface formed to have a substantially arc shape and into which a wire member is inserted, and a light source which is configured to emit light toward the wire member and is disposed so as to face the reflective surface in a direction of an optical axis of the emitted light, and an insertion portion configured to interiorly form an insertion path for inserting the wire member into the reflective surface. The reflective surface is disposed such that a center of the substantially arc shape is eccentric with respect to a center of the insertion path.

Light irradiation device and light irradiation method

A light irradiation device includes a plurality of light-emitting portions that emit light by being supplied with a current. The light-emitting portions each have a first power supply terminal, and a second power supply terminal; a plurality of light-emitting elements; and a wiring pattern. The wiring pattern has a first wiring region and a second wiring region. Two of the light-emitting portions that are disposed adjacent to each other are disposed such that the space between the respective first wiring regions or the space between the respective second wiring regions is smaller than the space between the first wiring region of one of the light-emitting portions and the second wiring region of the other of the light-emitting portions.

To provide an antiobesity agent. An antiobesity agent containing an extract of walnut branches, shells, or leaves as an active ingredient.

Antiobesity agent containing walnut extract

[Problem] To provide a mitochondria-function regulator effective for treatment or prevention of obesity, and a screening method therefore. [Solution] The mitochondria-function regulator of the present invention contains, as an active ingredient, a PGC-1&#x3b2;-protein function regulator synoviolin. The screening method of the present invention includes a step for causing a test substance to act on an adipose tissue cell or an individual animal, and measuring or detecting one or more of the following in the adipose tissue cell: (1) expression level of synoviolin; (2) a bond between synoviolin and PGC-1&#x3b2; protein; and (3) the ubiquitination of the PGC-1&#x3b2; protein by synoviolin.

PGC-1beta-protein-function regulator, mitochondria-function regulator, anti-obesity agent, and screening method therefor

An object is to find a substance which inhibits IL-2 production. 

Inhibition of IL-2 production

The present invention provides a retroviral vector containing a membrane protein having a hemagglutinin activity. The present inventors constructed a retroviral vector pseudotyped by the membrane protein having a hemagglutinin activity. This viral vector showed gene transfer at a high efficiency into host cells. In particular, it was established that genes can be transferred thereby at a high efficiency into cells into which genes can hardly be transferred by the conventional techniques, for example, blood cells and hematopoietic cells including hematopoietic stem cells, and mucous cells including mucosa epithelial cells. The viral vector of the present invention is highly useful as a vector for gene therapy.

Pseudotype retroviral vectors containing membrane proteins having hemagglutinin activity

The present invention pertains to a DNA encoding a polypeptide including an entire sequence of the amino acid sequence as shown by SEQ ID NO: 2 or a partial sequence thereof, or a polypeptide including the polypeptide described above, wherein any of the polypeptides has an activity of a receptor capable of binding to a murine PBSF/SDF-1; a polypeptide encoded by the DNA described above, wherein the polypeptide has an activity of a receptor capable of binding to a murine PBSF/SDF-1; cells expressing the polypeptide described above and a human CD4 protein; and a method of screening an AIDS onset inhibitor or an HIV-1 infection inhibitor, characterized by the use of the cells described above. According to the present invention, there can be provided a novel murine CXC chemokine receptor gene, a method of screening an HIV-1 infection inhibitor, and the like, each of which is useful in studies of a therapeutic agent for AIDS and the functional mechanism of HIV-1 infection.

Mouse CXC chemokine receptor

The invention intends to provide a manufacturing method of a semiconductor integrated circuit device, which can detect an off-specification faulty wafer in real time. An abnormality detection server stores apparatus log data outputted from semiconductor manufacturing apparatus that processes a semiconductor wafer in an apparatus log data memory. Thereafter, in a lot end signal receiver, when a lot end signal outputted from the semiconductor manufacturing apparatus is received, an abnormal data detector, after referencing an abnormality detection condition setting file stored in a first detection condition memory, based on the referenced content, judges whether there are abnormal data in the apparatus log data stored in the apparatus log data memory or not. Upon detecting an abnormality, a detection result is outputted to an engineer PC and an operator terminal unit.

Manufacturing method of semiconductor integrated circuit device

The present invention pertains to a DNA encoding a polypeptide comprising an entire sequence of the amino acid sequence as shown by SEQ ID NO:2 of Sequence Listing or a partial sequence thereof, or a polypeptide comprising the polypeptide described above, wherein any of the polypeptides has an activity of a receptor capable of binding to a murine PBSF/SDF-1; a polypeptide encoded by the DNA described above, wherein the polypeptide has an activity of a receptor capable of binding to a murine PBSF/SDF-1; cells expressing the polypeptide described above and a human CD4 protein; and a method of screening an AIDS onset inhibitor or an HIV-1 infection inhibitor, characterized by the use of the cells described above. According to the present invention, there can be provided a novel murine CXC chemokine receptor gene, a method of screening an HIV-1 infection inhibitor, and the like, each of which is useful in studies of a therapeutic agent for AIDS and the functional mechanism of HIV-1 infection.

A vector expressing two foreign genes by using RRE sequence and controlling the ratio of the expression doses of these genes owing to the modification is provided. This vector, which can be provided as a lentivirus vector based on SIVagm, is constructed by modifying a virus-origin expression regulatory sequence into another expression regulatory sequence so as to eliminate the dependency on the virus-origin protein. Although this vector has a packaging signal, it has been modified so that the risk of the occurrence of wild strains due to gene recombination is lowered and no virus structural protein is expressed. This vector is highly useful as a gene therapeutic vector with a need for transferring two genes while controlling the expression doses or expression dose ration thereof.

Vector for the expression of two foreign genes

A resin-sealed semiconductor device is provided which allows unwanted air to be bled out steadily and readily from the space defined between the resistor of a plate-like shape and the insulating substrate in the resin sealing step. The resin-sealed semiconductor device includes a resistor of a plate-like form anchored at both ends to the upper main surface of a substrate thereof. A space is provided between the resistor and the substrate. The primary components including the resistor mounted on the substrate are sealed with a curing resin material. In particular, the resistor has an aperture provided in a portion thereof, which is opposite to the substrate and defines the space with the substrate, for communication between the space and the upper side of the resistor.

Resin-sealed semiconductor device

A planar shape characteristic measuring apparatus and method, which can precisely and efficiently measure the characteristics relating to a surface shape of the measured surface of a disk such as a data recording surface of an optical disk including a laser Doppler speed meter which detects a perpendicular direction speed of a measured surface of a rotating disk; a tilt angle calculating unit which calculates a tilt angle in the rotational direction of an optical disk at each measuring position to a reference surface based on a linear speed at each measuring position detected by the laser Doppler speed meter and the detected perpendicular direction speed; a displacement calculating unit which calculates a perpendicular direction displacement of the optical disk at each measuring position; an acceleration calculating unit which calculates a perpendicular direction acceleration; and a focus servo error calculating unit which calculates a focus servo error which is predicted to occur in a focus servo system.

Planar shape characteristic measuring apparatus and planar shape characteristic measuring method

A gate turn-off thyristor including N-type emitter regions (4) formed in part in the surface layer of a P-type base layer (3), and P.sup.+ layer regions (10) of a high impurity concentration formed immediately beneath gate electrodes (8) in the P-type base layer (3) and immediately beneath the periphery of the N-type emitter regions (4), such that the depth of the P.sup.+ layer regions immediately beneath the gate electrodes (8) is selected to be deeper than the N-type emitter regions (4).

Gate turn-off thyristor having P.sup.+  gate and emitter

Growing community of inventors

Tokyo, Japan

Toshihiro Nakajima