Kabushiki Kaisha Toshiba

Toshihiro Maki

Noriaki Yagi

Takashi Ishigami

Takashi Yamanobe

Shigeru Ando

Mituo Kawai

Michio Sato

Michio Satou

Yoshiharu Fukasawa

Minoru Obata

Koichi Watanabe

Mitsushi Ikeda

Yoshiko Tsuji

Yasuo Kohsaka

Akihisa Nitta

Hiromi Shizu

Tohru Komatsu

An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same

A Mo&#x2014;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&#x2014;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&#x2014;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&#x2014;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&#x2014;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&#x2014;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi (where M: refractory metal) grains and Si grains, wherein the number of MSi grains independently existing in a cross section of 0.01 mm of the mixed structure is not greater than 15, the MSi grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi,(where M: refractory metal) grains and Si grains, wherein the number of MSi,grains independently existing in a cross section of 0.01 mm,of the mixed structure is not greater than 15, the MSi,grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi,grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

A Mo&mdash;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&mdash;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&mdash;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&mdash;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&mdash;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&mdash;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for

This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

Highly purified metal material and sputtering target using the same

A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

Ti-W sputtering target and method for manufacturing same

In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

Sputtering target and method of manufacturing the same

This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

Growing community of inventors

Yokohama, Japan

Toshihiro Maki