Kabushiki Kaisha Toshiba

Alpad Corporation

Toshihiro Kuroki

Hidenori Egoshi

Masahiro Ogushi

Kazuhiro Inoue

Haruhiko Okazaki

Teruo Takeuchi

Takashi Arakawa

Yoshio Noguchi

Toshitake Kitagawa

Tetsuya Muranaka

Kazuhiro Tamura

Kazuaki Otsuka

Yoshio Ariizumi

Toshiaki Hosoya

Naoya Ushiyama

Yuki Akamatsu

Toshihiro Komeya

A semiconductor light emitting device includes a light emitting chip that includes a semiconductor layer at a first surface. A transparent film is provided on the semiconductor layer and forms an interface therewith. A phosphor resin layer, including a resin and a phosphor, is provided on the transparent film. A refractive index of the transparent film is greater than a refractive index of the semiconductor layer.

Semiconductor light emitting device

A light-emitting device includes a semiconductor light-emitting element, for example, a light emitting diode. A first metal member includes a first metal plate and a first metal layer between the semiconductor light-emitting element and a first surface of the first metal plate. An insulating layer contacts a second surface of the first metal plate. The second surface is in a second plane that intersects a first plane of the first surface.

Semiconductor light-emitting device and method for producing the same

According to one embodiment, a light emitting device includes a base, a light emitting element, and a fluorescent body-containing layer. The light emitting element is installed on the base, has an upper surface and a lower surface, and includes a light emitting unit on the upper surface. The fluorescent body-containing layer is provided on the light emitting element and has a lower surface having an area smaller than an area of the light emitting unit and an upper surface having an area larger than an area of the light emitting unit.

Light emitting device

According to one embodiment, a light emitting device includes a first lead, a light emitting element, a second lead and a molded body. The first lead includes a die pad portion having a major surface and a recess provided in the major surface, a bent portion bent toward above the major surface, and a thermally conductive portion extending outward from the die pad portion. The first lead is provided with a slit at an end of a fold. The light emitting element is bonded to a bottom surface of the recess. The second lead with one end portion is opposed to one end portion of the first lead. The molded body covers the light emitting element, the bent portion, the die pad portion, the thermally conductive portion, and the one end portion of the second lead, penetrates through the slit, and is made of a resin.

A light-emitting device includes: a first lead including a bonding region and a first outer edge extending generally parallel to a first direction; a light-emitting element bonded to the bonding region; a second lead including an electrical connection region connected to the light-emitting element; and a molded body including a first side surface generally perpendicular to the first direction, a second side surface provided on a side opposite to the first side surface and being generally perpendicular to the first direction, a lower surface, and a recess provided in a surface opposite to the lower surface, the molded body being formed so that one end portion of the first lead protrudes from the first side surface, the other end portion of the first lead and an end portion of the second lead each protrude from the second side surface, and the bonding region and the electrical connection region are exposed from a bottom surface of the recess. The one end portion of the first lead and the end portion of the second lead each are bent downward, the other end portion of the first lead are bent upward or downward, and a width of the first lead across the bonding region in a second direction perpendicular to the first direction are narrower than a width of the one end portion and wider than a width of the other end portion.

A semiconductor light-emitting element is disposed in a depression of a container. A first fluorescent material layer is located in the depression. At least a portion of the first fluorescent material layer is provided between the opening of the depression and the semiconductor light-emitting element. A second fluorescent material layer having first and second portions is disposed in the depression. The first portion is provided between the bottom of the depression and the semiconductor light-emitting element. The second portion is provided between the side surface of the depression and the semiconductor light-emitting element. The first and second fluorescent material layers are excited by the light radiated from the semiconductor light-emitting element to emit a light having a first wavelength longer than the emission wavelength of the semiconductor light-emitting element and another light having a second wavelength longer than the first wavelength respectively.

Growing community of inventors

Fukuoka-ken, Japan

Toshihiro Kuroki