Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Toshihiro Kuriyama

Takao Kuroda

Kenju Horii

Rieko Nishio

Hiroyuki Mizuno

Tsuguhiro Korenaga

Takumi Yamaguchi

Shinji Uchida

Norimoto Nouchi

Atsushi Tomozawa

Yuji Matsuda

Toshio Fukazawa

Hiroyasu Tsuji

Hiroyuki Senda

Shigenori Matsumoto

Ken Henmi

Shougo Nasu

Kenichi Nishijima

Yoshimitu Hiroshima

Syouji Tanaka

A solid-state image sensing device includes: a plurality of light receiving elements arranged in a matrix in a device formation region surrounded by a device isolation region of a semiconductor substrate; a plurality of vertical transfer sections for transferring charges of the light receiving elements in the column direction; and a horizontal transfer section for receiving the charges from the vertical transfer sections and for transferring the received charges in the row direction. The horizontal transfer section includes: a horizontal channel region; and a plurality of horizontal transfer electrodes extending over the horizontal channel region and the device isolation region and being spaced apart from each other. The distance between the horizontal transfer electrodes is larger at a boundary between the device formation region and the device isolation region than in the middle of the horizontal channel region.

Solid-state image sensing device and method for fabricating the same

It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are provided a plurality of photoelectric conversion portions arranged in a matrix on a substrate, a vertical transfer channel arranged between vertical columns of the photoelectric conversion portions, a plurality of vertical transfer electrodes for transferring a charge of the photoelectric conversion portions to the vertical transfer channel, a light-shielding film that is laminated on the vertical transfer electrodes via a first insulating film and has a plurality of window portions, each defining a light-receiving portion of each of the photoelectric conversion portions, and a shunt wiring that is arranged in a region overlapping the vertical transfer channel and is insulated from the light-shielding film by a second insulating film. A driving pulse according to a drive phase of each of the vertical transfer electrodes is supplied from the shunt wiring.

Solid-state imaging device and method for manufacturing the same

A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.

Solid-state imaging device and method for fabricating the same

An object of the present invention is to provide a solid-state imaging device that can be slimmed down and have an improved picture quality without sacrificing its sensitivity and the manufacturing method of the solid-state imaging device. The solid-state imaging device includes an imaging unit where unit cells are arranged in a two-dimensional array. Each of these unit cells has a photodiode and a first microlens and a second microlens which are formed above the photodiode. The maximum curvatures of the convex parts become greater from the center part to the periphery of the imaging unit.

Solid-state imaging device and manufacturing method of solid-state imaging device

The present invention aims to provide a solid-state imaging device that enables miniaturization of camera while maintaining the level of electrostatic damage resistance in the solid-state imaging device, and includes: an imaging unitthat transfers signal charge generated by performing photoelectric conversion on incident light, converts the signal charge into an electric signal, and outputs the electric signal as an image signal; and a peripheral circuit portionwhich includes: a signal electrode pad; a power supply electrode pad; and a protection circuitthat has diodesandplaced in opposition, and that discharges static electricity entering from the exterior, to the power supply electrode pad

Solid-state imaging device and manufacturing method thereof

A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.

Solid-state imaging device and manufacturing method for the same

A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction; and a plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes. Each of the vertical transfer registers includes a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel. Each of the shunt interconnections is configured to surround the light receiving portions and having windows that expose the light receiving portions.

Solid state imaging device

The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.

Solid-state imaging device, signal charge detection device, and camera

A plurality of light receiving elements are arranged in a matrix with uniform space therebetween in a light receiving region defined on a semiconductor substrate. A plurality of read-out electrodes are formed on the semiconductor substrate in an arrangement corresponding to the light receiving elements to read charges generated by the light receiving elements, a light shield film having openings positioned above the light receiving elements is formed to cover the read-out electrodes, first optical waveguides are formed in the openings above the light receiving elements and second optical waveguides are formed on the light shield film. The second optical waveguides are in the form of dots, stripes or a grid when viewed in plan.

Solid state imaging device and method for manufacturing the same

Each intralayer lens disposed between a color filterand photoelectric conversion sections has a Fresnel lens structure composed of a center lensand an annular lens. As a result, the thickness of the intralayer lenses is reduced, and positions of upper lenses can be lowered without having to reduce the thickness of a color filter.

Solid state imaging device including annular and center lens in contact with each other

Solid-state imaging device

In a solid-state imaging device of the present invention, light-sensitive elements, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate. A plurality of detecting electrodesare provided on the semiconductor substratecorresponding to the light-sensitive elementsfor detecting an electrical charge generated by each light-sensitive element. A plurality of interconnectionscoat the detecting electrodes, and apply a voltage thereto. A plurality of reflecting wallsare formed in a grid pattern over the interconnectionso as to partition the light-sensitive elementsindividually for reflecting a portion of light entering the semiconductor substratefrom above onto the light receiving section of each light-sensitive element. The plurality of reflecting wallsare electrically insulated from the interconnections

A first gate electrode and a second gate electrode are formed on a semiconductor substrate, and then a resist pattern is formed so as to selectively leave open a portion including an overlap between the first and second gate electrodes. Next, the overlap between the gate electrodes is removed through isotropic etching. Etching is carried out at this time by an amount within a range of 140% to 200% of the film thickness of the second gate electrode. Next, a normal inter-layer insulating film and light-shielding film are formed. It is possible to eliminate the overlap between the gate electrodes adjacent to an opening of the light-shielding film, suppress the height of the light-shielding film at that portion, reduce shading for the light condensed by a lens and thereby improve the light condensing efficiency of the lens.

Method of manufacturing solid image pickup apparatus

The present invention aims to provide a solid-state apparatus and a manufacturing method thereof, the solid-state apparatus having both high transfer efficiency in a horizontal transfer CCD and efficient breakdown voltage in a vertical transfer CCD and including a semiconductor substrate, first layer poly-silicon electrodesand second layer poly-silicon electrodeswhich form two layered overlap poly-silicon electrodes, an embedded channel regionwhich is formed in a surface unit of the semiconductor substrateand becomes a transfer path for signal charge, and a photodiode region where photodiodes are aligned two-dimensionally, the photodiodes converting light into signal charge and accumulating the signal charge, wherein an inter-electrode distance c in the horizontal transfer CCD is shorter than an inter-electrode distance a in the vertical transfer CCD.

Growing community of inventors

Otsu, Japan

Toshihiro Kuriyama