Daido Tokushuko Kabushiki Kaisha

Other

Nagoya University

Katsumi Kishino

Yamauchi, Norikatsu

Toshihiro Kato

Takashi Saka

Tsutomu Nakanishi

Hiromichi Horinaka

Hiromoto Susawa

Toru Ujihara

Yoshikazu Takeda

Masumi Hirotani

Xiuguang Jin

Naoto Yamamoto

Norikatsu Yamauchi

Tsutmu Nakanishi

A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.

Spin-polarized electron source

An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Spin-polarized electron emitter having semiconductor opto-electronic

A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

Process of emitting highly spin-polarized electron beam and

A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.

Semiconductor device for emitting highly spin-polarized electron beam

A semiconductor device having a reflecting layer consisting of unit semiconductors each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.

Semiconductor device having reflecting layers made of varying unit

A light-emitting diode having a light-generating layer for generating an electromagnetic radiation by electroluminescence, a light-emitting surface through which the radiation is emitted, and a light-reflecting layer remote from the light-emitting surface, for reflecting a portion of the radiation toward the light-generating layer so that the radiation reflected by the light-reflecting layer is also emitted through the light-emitting surface. The light-reflecting layer consists of two or more interference type reflecting layers which include one or more reflecting layers each capable of most efficiently reflecting a wave whose wavelength is longer than the nominal wavelength of the radiation. The light-emitting surface may have irregularity for irregularly reflecting the radiation, or an anti-reflection layer formed thereon by deposition.

Growing community of inventors

Kasugai, Japan

Toshihiro Kato