Mitsubishi Electric Corporation

Toshihiro Imasaka

Yuji Kawasaki

Kazuhiro Shimizu

Manabu Yoshino

A semiconductor device includes a semiconductor substrate of a first conductivity type, a RESURF layer of a second conductivity type, a buried layer of the second conductivity type formed in the bottom portion of a high-side circuit, and a MOSFET having the RESURF layer serving as a drift layer, in which the MOSFET includes a first semiconductor layer of the second conductivity type serving as a drain layer, an end portion of the first semiconductor layer is located on a low-side circuit side more than an end portion of the buried layer is, and a curvature center of a curved portion of the first semiconductor layer is located closer to a high-side circuit than a curved portion of the buried layer is, and the curvature of the curved portion of the first semiconductor layer is smaller than that of the curved portion of the buried layer.

Semiconductor device and method of manufacturing semiconductor device

Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.

Semiconductor device comprising a MOSFET having a RESURF region and higher peak impurity concentration diffusion region in the RESURF region

The semiconductor device that supplies a charging current to a bootstrap capacitor includes a semiconductor layer, an N-type diffusion region, an N-type diffusion region, a P-type diffusion region, a P-type diffusion region, an N-type diffusion region, a source electrode, a drain electrode, a back gate electrode, and a gate electrode. The N-type diffusion region and the N-type diffusion region are electrically connected to a first electrode of the bootstrap capacitor. The N-type diffusion region is supplied with a power supply voltage. The source electrode is connected to the N-type diffusion region and is supplied with the power supply voltage. The back gate electrode is connected to a region separated from the N-type diffusion region and is grounded. The breakdown voltage between the source electrode and the back gate electrode is greater than the power supply voltage.

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Tokyo, Japan

Toshihiro Imasaka