Tdk Corporation

Toshihiro Iguchi

Yuichiro Sueda

Ryota Namiki

Norihisa Ando

Kenya Tamaki

Akitoshi Yoshii

Tetsuhiro Takahashi

Satoshi Takagi

Tatsuya Kojima

Hisashi Kobayashi

Kazuyuki Hasebe

Akira Goshima

Daisuke Yoshida

Shinya Ito

Katsumi Kobayashi

Kosuke Yazawa

Akihiro Masuda

Nobuto Morigasaki

Shinya Saito

Kayou Matsunaga

Yoshiki Satou

Hiroki Akiba

Masahide Ishizuya

Yasuhiro Okui

Ryota Nomura

Atsushi Watanabe

Makoto Takahashi

Yasuhiro Ito

Takashi Kojima

Akira Sato

Shigeki Sato

Toshihiko Kaneko

Kazunori Oshima

Hiroaki Murakami

Kazushige Ito

Tomoko Suzuki

Dan Sakurai

Tomoaki Nonaka

Tomohisa Fukuoka

Takeshi Shibahara

Yoshitaka Nagashima

Takuya Imaeda

Takaki Shinkawa

Haruya Hara

Takeshi Shouji

Hiroki Saitoh

Yuuki Hidaka

Satoshi Takahara

An electronic device includes an element body. The element body includes at least two internal electrode layers and a dielectric layer laminated between the internal electrode layers. Ni oxide particles exist at a boundary between the internal electrode layers and the dielectric layer. The dielectric layer is in contact with the internal electrode layers at first and second boundaries. The dielectric layer includes a first dielectric large particle and a second dielectric large particle. The first dielectric large particle is in contact with at least one of the Ni oxide particles existing at the first boundary and in contact with one of the internal electrode layers at the second boundary. The second dielectric large particle is in contact with at least one of the internal electrode layers at the first boundary and in contact with at least one of the Ni oxide particles existing at the second boundary.

Electronic device

Provided is a dielectric composition containing: a main component expressed by {BaSr}TaO; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and magnesium. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO, and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO.

Dielectric composition and electronic component

Provided is a dielectric composition containing: a main component expressed by {BaSr}TaO; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.

An electronic component includes a component body, a metal terminal, and a bonding material. The component body includes an element body and an external electrode. The metal terminal includes a first main surface and a second main surface, and a side surface. The bonding material electrically and physically connects the external electrode and the metal terminal. The metal terminal includes a first metal layer including the first main surface, a second metal layer including the second main surface, and a terminal body including the side surface. The terminal body is exposed at the side surface, and the first metal layer and the second metal layer are separated from each other on the side surface. Each of the first metal layer and the second metal layer includes a Ni plated layer. The terminal body includes Cu. The bonding material includes solder.

Electronic component

An electronic device includes an element body. The element body includes a first internal electrode layer, a second internal electrode layer, and a dielectric layer laminated between the first internal electrode layer and the second internal electrode layer. Ni oxide particles exist at a first boundary between the first internal electrode layer and the dielectric layer. The dielectric layer includes a dielectric large particle in contact with both of the Ni oxide particles at the first boundary and the second internal electrode layer.

A ceramic electronic device includes an element body including a ceramic layer and an internal electrode layer, and an external electrode formed on an end surface of the element body and electrically connected to at least one end of the internal electrode layer. The external electrode includes a baked electrode layer. The baked electrode layer includes a main component comprising copper and/or a copper alloy. The baked electrode layer includes a void. An inner wall surface defining the void is at least partly covered by a film comprising nickel and/or a nickel alloy.

Ceramic electronic device having a copper-containing baked electrode layer

An electronic component with a metal terminal includes an electronic component having an element body, and external electrodes respectively provided on end surfaces facing each other in an X direction in the element body; and plate-shaped metal terminals having joint portions joined to the external electrodes, and leg portions provided to protrude beyond the electronic component in a Z direction. The leg portion of the metal terminal has an extending part continuously extending in the Z direction from the joint portion, a first bent part bent from a tip of the extending part to the electronic component side at a first angle formed to be an acute angle with respect to the extending part, and a second bent part bent from a tip of the first bent part at a second angle larger than the first angle with respect to the extending part.

Electronic component with metal terminal, connection structure, and method for manufacturing connection structure

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABOas a main component. The first segregations each include at least Ba, V, and O. A molar ratio (Ba/Ti) of Ba to Ti detected in the first segregations is 1.20 or more.

Dielectric composition and multilayer ceramic electronic device

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABOas a main component. The first segregations each include Ba, Ti, Si, Ni, and O.

A multilayer electronic component includes a plurality of dielectric layers and a plurality of electrode layers that are alternately stacked. A skewness of a distribution of thicknesses of the plurality of dielectric layers at a plurality of arbitrary locations of the plurality of dielectric layers is 0.2 or more.

Multilayer electronic component

A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABOas a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B and Si. The second region includes an Al based oxide mainly including Al.

Ceramic electronic device

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABOas a main component. The first segregations each include at least Ba, P, and O. A molar ratio (Ba/Ti) of Ba to Ti in the first segregations is 1.20 or more.

A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal, electrode layer. The element body includes a boundary layer at an end of the ceramic layer. The ceramic layer includes a perovskite compound represented by ABOas a main component. The boundary layer includes Ba and Ti as a main component. The boundary layer includes 0.27-0.40 parts by mol of Ba, provided that a total of Ba and Ti included in the boundary layer is 1 part by mol.

Ceramic electronic device having an element body with a boundary layer including Ba and Ti at an end of a ceramic layer

A ceramic electronic device comprises an element body including a ceramic layer and an internal electrode layer, and an external electrode electrically connected to at least one end of the internal electrode layer. The element body includes an interface part at least at a part of a boundary between the external electrode and the ceramic layer. The interface part includes an oxide containing aluminium and an oxide containing boron.

A dielectric composition includes a dielectric grain including a perovskite compound and a first segregation phase including at least Ca, Al, Si, and O.

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Toshihiro Iguchi