Sharp Kabushiki Kaisha Corporation

Toshihiko Yoshida

Shinji Kaneiwa

Haruhisa Takiguchi

Sadayoshi Matsui

Osamu Yamamoto

Hiroaki Kudo

Masanori Watanabe

Saburo Yamamoto

Satoshi Tominaga

Akira Tanimoto

Toshiyuki Itoga

Takashi Tatsumi

Masato Takemoto

Hideki Ichikawa

Terumitsu Santo

Yutaka Iizuka

Mamoru Okanishi

Shinji Okamoto

Susumu Genba

Toshiro Kita

Mikio Higashiyama

Hidenori Kawanishi

Taiji Morimoto

Hisao Okada

Fumihiro Konushi

Toshimasa Hamada

Takehiro Shiomoto

Kei Yamamoto

Masumi Nakamichi

Yoshie Fujishiro

Masahiro Yamaguchi

Chitose Sakane

Munezo Abe

Shohichi Kato

Kenzo Nozaki

Takeoki Asahi

Nobuo Tanaka

Masayuki Honda

A semiconductor light emitting device includes an LED element, a lead frame on which the LED is mounted, a lead frame electrically connected to the LED element via a wire, transparent resin formed on the LED element and on the lead frames, and light shielding resin having a reflectance higher than the reflectance of the transparent resin, surrounding the perimeter of the LED. The transparent resin includes a lens portion constituting a lens on the LED, and a holding portion holding the lead frame.

Semiconductor light emitting device and fabrication method thereof

A semiconductor laser device and optical pickup in which the reflectance of the side beam at a header portion will not adversely affect the characteristics of the optical pickup, and superior in productivity, and a method of fabricating such a semiconductor laser device are obtained. A reflector is attached on a side beam incident region of a leading end plane of a header mounted with a laser chip that emits a laser beam. Said side beam is one of the two side beams generated by the reflected &#xb1;first order beams and fed back through the optical system returning towards the header portion to strike the side beam incident region. The reflector reflects side beam outside the optical system.

Semiconductor laser device, optical pickup and fabrication method of semiconductor laser device

A semiconductor laser device has an n-type AlGaAs first cladding layera multiple quantum well active layerand a p-type AlGaAs second cladding layerformed in this order and supported by an n-type GaAs substrateThe multiple quantum well active layerhas two quantum well layersand barrier layersprovided on both sides of each quantum well layerThe quantum well layersare each made of InGaAsP, while the barrier layersare each made of InGaAsP. Here, vand vsatisfy v&#x3c;vwhile wand wsatisfy w&#x3c;wThe barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.

Semiconductor laser device

There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem provided with a plurality of lead pins through , a sub-mount that is die-bonded onto the stem and has its surface formed integrally with a monitoring PD and two semiconductor laser elements and that are die-bonded onto the sub-mount and have emission light monitored by the monitoring PD . A first bonding surface i.e. anode electrode of the monitoring PD and a second bonding surface i.e. end surface of a lead pin that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding

A hyper-resolution optical device which can focus a beam of light to a diameter less than the diffraction limit. The optical device has an optical system disposed on a transmissive substrate. One component in the optical system is a hyper-resolution optical component which passes or reflects light and which has a central portion which does not pass or reflect light, respectively. The hyper-resolution optical component can be integrated with the transmissive substrate. Such optical devices are particularly suitable for optical pick-up devices, laser printers, sensors.

Hyperresolution optical system

A light wavelength converter which includes a laser beam source for radiating fundamental waves, a first optical waveguide formed on a substrate so as to convert the fundamental waves into harmonics which are radiated through the substrate, a grating coupler provided on the substrate so as to receive the harmonics propagated through the substrate, and a second optical waveguide formed on the substrate, the second optical guide being connected to the grating coupler so as to radiate the harmonics outside.

Light wavelength converter for a wavelength of laser beams into a short

A laser beam oscillating apparatus which includes a plurality of semiconductor laser beam oscillators (21, 22, 23) oscillating laser beams of a different wavelength from each other, an optical waveguide (12) formed on a substrate (11) so that the oscillated laser beams propagate therein and are then emitted in the same direction from the output end thereof and an optical coupler (13) to introduce the laser beams into the optical waveguide, thus allowing simultaneous introduction of these semiconductor laser beams of different wavelengths into the optical waveguide and simultaneous output of them in the same direction from the output end thereof.

Laser beam oscillating apparatus

An optical information processing apparatus which includes a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting a reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.

Optical information processing apparatus

A light wavelength converter which includes a light source for emitting fundamental waves having a desired wavelength, a first loop-shaped optical waveguide for converting the fundemental waves into harmonics, and a second optical waveguide for receiving the light from the source, wherein the two waveguides are coupled by an optical directional coupler.

Light wavelength converter

A method for producing a diffraction grating in optical elements with an optical waveguide is disclosed which comprises the steps of: forming a transparent conductive film on the optical waveguide; forming an electron beam resist film on said transparent conductive film; drawing a diffraction grating pattern on said resist film with an electron beam; and developing said resist film with a diffraction grating pattern drawn thereon to form a resist film of the diffraction grating pattern.

Method for producing a diffraction grating in optical elements

A light wavelength converter comprising a substrate that is made of a material with a non-linear optical effect, and a loop-shaped optical waveguide that is formed on the substrate, whereby a second harmonic wave or a sum wave emanates from a fundamental wave that has been propagated in a specific area of the optical waveguide and part of the fundamental wave that has not been converted to the second harmonic wave or the sum wave is returned to the specific area of the optical waveguide, so that a fundamental wave with a relatively low output can be efficiently converted to a second harmonic wave and a high-output second harmonic wave can be obtained.

A grating coupler comprising an optical waveguide and a grating formed on the optical waveguide in which light is propagated for optically coupled light rays inside and outside of the optical waveguide, wherein the coupling coefficient of the grating coupler is gradually changed in the direction of propagation of guided light in the optical waveguide, whereby the intensity distribution of light rays inside or outside of the optical waveguide agrees with the coupling efficiency distribution of the grating coupler, so the coupling efficiency of the grating coupler can be greatly improved.

Grating coupler

Disclosed is an optical pumping-type solid-state laser apparatus in which a semiconductor laser device is used as a light source for optical pumping. The solid-state laser apparatus includes first and second photodetectors. The former detects the amount of light emitted from the semiconductor laser device, and the latter detects the amount of laser light transmitted through a filter plate which has the same light-absorbance characteristics as that of the solid-state laser. In accordance with the detected results, a driving circuit drives the semiconductor laser device to obtain a laser beam with an appropriate output level and a temperature regulator regulates the temperature of the semiconductor laser device so that the wavelength of the laser light to be emitted therefrom is accurately adjusted to be the same as that of the light to be efficiently absorbed by the solid-state laser. The laser beam with the accurately adjusted wavelength is used for optically pumping the solid-state laser.

Optical pumping-type solid-state laser apparatus with a semiconductor

An image processing device for controlling data transfer includes an image scanner, an image printer, a facsimile control unit, bus lines for data transfer, a bidirectional parallel interface unit, and a main CPU in a housing. The device is connected to an external data processing device through the parallel interface unit. In addition to the functions which are obtained independent from the external data processing device, the image processing device realizes various kinds of functions by controlling the image scanner, the image printer facsimile control unit and the interface unit by the main CPU in response to commands from the data processing device. As a result, various kinds of image processing functions are carried out.

Growing community of inventors

Nara, Japan

Toshihiko Yoshida