Kaneka Corporation

Toshihiko Uto

Daisuke Adachi

Kenji Yamamoto

Masashi Yoshimi

Takashi Kuchiyama

Toru Terashita

Wataru Yoshida

Hisashi Uzu

Mitsuru Ichikawa

Shintaro Osumi

Hironori Takata

Takashi Suezaki

A balloon catheter comprising: a first shaft having a first lumen and a second lumen; a second shaft located distal to the first shaft; a balloon located distal to the second shaft; and a tubular member that is disposed inside the balloon and has a light transmittance of 90% or more; wherein: the first shaft is made of a resin; a cross-sectional area of the resin forming the first shaft is larger than a cross-sectional area of either the first lumen or the second lumen, which has a larger cross-sectional area, in a cross section perpendicular to a longitudinal direction; a proximal end of the tubular member is joined to a distal end of the first lumen; a proximal end of the balloon is joined to the second shaft; and a distal end of the balloon is joined to the tubular member.

Balloon catheter

A light irradiation medical device comprising: a shaft having a lumen extending in the longitudinal direction; and a light guiding device that is disposed in the lumen of the shaft and is movable in the longitudinal direction. The light guiding device extends in the longitudinal direction and has a light diffusion part at a distal part of the light guiding device. The shaft has: a first window in a peripheral wall of a distal part of the shaft; and a second window at a distal end face of the shaft. The shaft has a reflection surface inside the shaft and at a distal side with respect to the first window, and reflects light emitted from the light guiding device.

Light irradiation medical device

A light therapy diagnostic device comprising a shaft, an optical waveguide disposed in a lumen of the shaft and being movable forward and backward in a longitudinal direction of the shaft, and a transparent member disposed in the lumen and located distal to the optical waveguide, wherein: the optical waveguide guides a first light and a second light; the shaft has a lateral emission window which allows the first light and the second light to be emitted toward a lateral direction and a distal emission window which allows the first light to be emitted toward a distal direction; the optical waveguide includes a core and a clad, wherein a distal end surface of the core is inclined with respect to an optical axis of the optical waveguide; the first light passes through the transparent member in a state where the optical waveguide is in contact with the transparent member.

Light therapy diagnostic device and method for operating the same

A light therapy diagnostic device comprising a shaft, and an optical waveguide disposed in a lumen of the shaft and being movable forward and backward in a longitudinal direction, wherein: the optical waveguide guides a first light and a second light; the shaft has a lateral emission window which allows the first light and the second light to be emitted toward a lateral direction and a distal emission window which allows the first light to be emitted toward a distal direction; a first mirror is provided on a distal end part of the optical waveguide and reflects the first light toward a lateral direction of the shaft; and a second mirror is provided on an inner surface of the shaft, located distal to a distal end of the lateral emission window, and reflects the first light reflected by the first mirror toward a distal direction of the shaft.

A solar cell includes a crystal substrate which has a major surface on a light reception side provided with a first texture surface and a major surface on a non-light reception side provided with a second texture surface. The second texture surface occupies 20% or more of the area of the major surface on the non-light reception side.

Solar cell, solar cell module, and solar cell manufacturing method

In manufacturing a crystalline silicon-based solar cell having an intrinsic silicon-based thin film and a conductive silicon-based thin film in this order on a conductive single-crystalline silicon substrate, plasma treatment is performed after the intrinsic silicon-based thin film is formed on the conductive single-crystalline silicon substrate. In the plasma treatment, a surface of the intrinsic silicon-based thin film is exposed to hydrogen plasma while a hydrogen gas and silicon-containing gases are being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during the plasma treatment is 150 to 2500 times the introduction amount of the silicon-containing gases.

Method for manufacturing photoelectric conversion device

In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a hydrogen plasma etching is performed. A second intrinsic thin-film is formed on the first intrinsic thin-film after the hydrogen plasma etching, and a conductive silicon-based thin-film is formed on the second intrinsic thin-film. The second intrinsic thin-film is formed by plasma-enhanced CVD with a silicon-containing gas and hydrogen being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during formation of the second intrinsic thin-film is 50 to 500 times an introduction amount of the silicon-containing gas.

A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.

Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module

The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.

Method for manufacturing crystalline silicon substrate for solar cell, method for manufacturing crystalline silicon solar cell, and method for manufacturing crystalline silicon solar cell module

The crystalline silicon-based solar cell includes a first intrinsic silicon-based thin-film, a p-type silicon-based thin-film, a first transparent electrode layer, and a patterned collecting electrode on a first principal surface of an n-type crystalline silicon substrate; and a second intrinsic silicon-based thin-film, an n-type silicon-based thin-film, a second transparent electrode layer, and a plated metal electrode on a second principal surface of the n-type crystalline-silicon substrate. On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer and the second transparent electrode layer is provided. The plated metal electrode is formed on an entire region of the second transparent electrode layer.

Crystalline silicon-based solar cell, crystalline-silicon solar cell module, and manufacturing methods therefor

A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 &#x3bc;m. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.

Method for making crystalline silicon-based solar cell, and method for making solar cell module

A solar cell of the present invention includes a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and an insulating layer between the first and second electroconductive layers, the insulating layer having an opening section formed therein. The first electroconductive layer is covered with the insulating layer, contains a low-melting-point material, and is conductively connected with a part of the second electroconductive layer via the opening section. The surface roughness of the second electroconductive layer is preferably 1.0 &#x3bc;m to 10.0 &#x3bc;m. The second electroconductive layer is preferably formed by a plating method. In order to conductively connect the first and second electroconductive layers, annealing of the first electroconductive layer by heating is preferably performed prior to forming the second electroconductive layer.

Solar cell and method of manufacturing same, and solar cell module

Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200&#xb0; C. under a hydrogen-containing atmosphere.

Method for manufacturing silicon-based solar cell

A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.

Growing community of inventors

Osaka, Japan

Toshihiko Uto