Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Toshihiko Uno

Saichirou Kaneko

Tetsuji Yamashita

Kazuyuki Sawada

Yasuhiro Takehana

A high-breakdown voltage semiconductor switching device includes a resurf region of a second conductivity type; a base region of a first conductivity type formed to be adjacent to the resurf region; an emitter/source region of the second conductivity type formed in the base region to be spaced from the resurf region; a gate electrode formed to cover a portion of the emitter/source region and a portion of the resurf region; a drain region of the second conductivity type formed in the resurf region to be spaced from the base region; and a collector region of the first conductivity type formed in the resurf region to be spaced from the base region. Furthermore, it includes an electrode connected to the collector region and the drain region and an electrode connected to the base region and the emitter/source region.

High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same

An ion-through regionis provided as a first opening in a passivation filmon a source electrodeand a drain electrode. The passivation filmis coated with a sealing resin to package the semiconductor device. At this point, the ion-through regionis filled with the sealing resin to put the sealing resin into direct contact with the source electrodeand the drain electrode. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation filmin a high temperature and high humidity atmosphere are discharged to the source electrodeand the drain electrodevia the ion-through regionand thus do not influence an N-type extended drain region. Therefore, the drain breakdown voltage can be improved.

Semiconductor device having a high breakdown voltage transistor formed thereon

P-type buried regionsandare formed in an extended drain regionformed in a P-type semiconductor substrate. An N-type buried regionis formed between the P-type buried regionsand. An N-type impurity concentration of the N-type buried region 113 along a G&#x2013;G' plane is low in the vicinity of boundaries between the N-type buried regionand the P-type buried regionsandand is increased from the boundaries to an inside of the N-type buried region

Semiconductor device

A semiconductor device includes a semiconductor substrate of a first conductivity type, in which an extended drain region of a second conductivity type and a source region of the second conductivity type are formed with an interval therebetween, wherein the extended drain region includes a plurality of buried layers, each formed by burying an impurity layer of the first conductivity type, the plurality of buried layers extending substantially parallel to a substrate surface and with an interval therebetween in a depth direction. A concentration of an impurity of the second conductivity type in the extended drain region at a depth of about 6 &#x3bc;m from the substrate surface is about 1&#xd7;10/cmor more and is about 30% or more of that at a depth of about 2 &#x3bc;m from the substrate surface.

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Osaka, Japan

Toshihiko Uno