Kabushiki Kaisha Toyota Chuo Kenkyusho

Other

Denso Corporation

Toyota Motor Engineering & Manufacturing North America, Inc.

Toshihiko Tani

Shigetaka Wada

Nobuo Kamiya

Naohiro Sugiyama

Yasuyoshi Saito

Atsuto Okamoto

Hisaaki Takao

Yoshiaki Fukushima

Kunihiko Hara

Teruhisa Akashi

Masaki Matsui

Hirofumi Funabashi

Kazukuni Hara

Shoichi Onda

Kazumasa Takatori

Fusao Hirose

Hiroaki Wakayama

Tsuyoshi Sasaki

Shin Tajima

Yasuo Kitou

Hidehito Matsuo

Hiroko Iguchi

Naoyoshi Watanabe

Wei Song

Shigeo Hori

Masahiko Kato

Haruyoshi Kuriyama

Tsuguto Takeuchi

Akio Takahashi

Hiroshi Itahara

Kunihito Koumoto

Takashi Onoda

Takeshi Hasegawa

Akihiko Murakami

Hiroshi Nozaki

Yujiro Hayashi

A method of forming a polyanion active material that includes providing a carbon source, providing a mobile ion source, providing an active metal material, providing a network material, providing a flux material, and mixing the various materials. In one aspect, the mixing step may include grinding or pulverizing materials to a uniform fine mixture. In one aspect, a ball mill may be utilized to mix the components. Following the mixing of the materials, the mixture is heated to a predetermined temperature in a non-oxidizing atmosphere to form a reaction product. In one aspect, the mixture is heated to a temperature above a melting temperature of the flux material. In this manner, the flux material provides a medium in which the various reactants may react to form the desired reaction product. Following the heating of the mixture the reaction product is washed, forming a carbon coated polyanion active material. Also disclosed is a polyanion active material that includes the in situ reaction product of a carbon source, mobile ion source, active metal material, network material, and a flux material wherein the polyanion active material includes a carbon coating formed thereon.

Polyanion active materials and method of forming the same

A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.

Solid oxide fuel cell

Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.

Anisotropically-shaped powder of an alkali metal oxide compound

Grain oriented ceramics, thermoelectric conversion element and production process thereof

Grain oriented ceramics

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same

A crystal-oriented ceramic has an isotropic or pseudoisotropic perovskite-type-structure of not smaller than 10% in Lotgering orientation degree. The ceramic may contain at least one of Bi, Sr and Ca. A host material, a raw material capable of producing a guest material and an additive having the ability of converting a host material into a guest material are mixed and roll-pressed, and sintered under heat to give the crystal-oriented ceramic as a large-sized and bulky material. This crystal-oriented ceramic has good crystal orientation-dependent characteristics including piezoelectricity, pyroelectricity, ionic conductivity, giant magneto-resistivity effect, etc. This crystal-oriented ceramic can be produced by orienting epitaxially the polycrystals of an isotropic or pseudoisotropic perovskite oxide according to the orientation of the crystal plane or axis of a host material. The ceramic can be applied to an inexpensive and large-sized device. The host material may be a magnetoplumbite-type-structured or Sr.sub.2 Nb.sub.2 O.sub.7 -type-structured material, and may be composed of morphologically-anisotropic grains.

Crystal-oriented ceramics, piezoelectric ceramics using the same, and

An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.

Method of producing silicon carbide single crystal

The present method is to produce an active material powder formed of a spinel oxide containing lithium or a layer-structured oxide containing lithium for a lithium secondary battery which is uniform in composition, fine in particle size and free of oxygen defects, and which is unlikely to cause capacity deterioration resulted from repetitive charge/discharge cycles at a high current density. A suspension 1 prepared by suspending an ingredient of the active material powder in a combustible liquid or an emulsion prepared by emulsifying a solution of the ingredient in the combustible liquid is sprayed in a droplet state 15 together with an oxygenic gas 2. The combustible liquid contained in the droplet 15 is burned to have the ingredient therein reacted and to evaporate the solvent. As a result, active material powder 4 formed of the spinel oxide containing lithium is obtained. An active material powder formed of the layer-structured oxide containing lithium is obtained by re-heating the oxide powder that has been generated by spraying and burning the droplet.

Method of producing active material powder for lithium secondary battery

In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.

Method of producing single crystals and a seed crystal used in the method

A composition of raw materials comprising silicon carbide, a substance containing at least one of Group IVa to VIa elements except any boride thereof, and a substance containing boron except any of the borides of Group IVa to VIa elements, and further containing, if required, carbon, or an organic compound which produces carbon as a result of thermal decomposition, or both, is fired to manufacture a silicon carbide-based material in which a boride of at least one of the elements of Groups IVa to VIa of the periodic table is dispersed. The silicon carbide-based material can be manufactured without using any of the borides of Group IVa to VIa elements as a starting material.

Method of manufacturing a silicon carbide-based material

A process for producing a metal boride sintered body having a density of at least 90% of the theoretical density and a raw material composition therefor. The raw material composition is composed of a metal oxide, a metal carbide, and boron carbide, the amount of boron carbide being 5 to 20% more than the amount stoichiometrically required to form a metal boride by reaction of boron in the boron carbide with the metal element(s) in the metal oxide and metal carbide. By using this composition, it is possible to produce a metal boride sintered body having high density and high hardness without adding a sintering auxiliary or carbon and using a very high pressure.

Process for producing sintered body of metal boride and raw material

A composite material comprises silicon carbide and a boride of at least one element of Groups IVa to VIa of the Periodic Table, at least a portion of the boride being in the form of fiber having an aspect ratio of 3 or above. The composite material has high toughness owing to the fibrous boride. The composite material is produced by molding a raw material mixture composed of silicon carbide, a substance containing at least one element of Groups IVa to VIa of the Periodic Table, at least a portion thereof being in the form of fiber having an aspect ratio of 3 or above, and a substance containing boron, and sintering the molded body.

Tough silicon carbide composite material containing fibrous boride

A high-toughness silicon carbide composite ceramic comprising silicon carbide, 5 to 50 vol % of graphite whiskers, and sintering aid, and a method for producing the composite ceramic. The composite ceramic has high-temperature strength and fracture toughness value, and also has electrical conductivity.

Silicon carbide composite ceramic

Growing community of inventors

Aichi, Japan

Toshihiko Tani