Other

Sumitomo Electric Industries, Limited

Toshihiko Takebe

Hideki Matsubara

Hiroki Ishinaga

Mamoru Maegawa

Kensaku Motoki

Koji Katayama

A light emission apparatus includes: an electrode; a LED mounted on the electrode with an indium layer interposed therebetween, the LED having a substrate formed of an n-type ZnSe single crystal, and an epitaxial light emission structure formed of a compound crystal comprising ZnSe serving as a matrix, the epitaxial light emission structure being provided on the substrate and emitting light when an electric current is introduced thereinto; and resin encapsulating the LED, the resin having a glass transition temperature of lower than 80 degrees centigrade or being soft to be still elastic in a vicinity of the LED at room temperature.

Light emission apparatus and method of fabricating the same

The present invention provide a light emitting device including: a resin base having a patterned interconnection; an n-type ZnSe substrate mounted on the resin base; an epitaxial light emission structure formed of a compound crystal relating to ZnSe serving as a matrix, formed on the ZnSe substrate and emitting light when an electric current is applied. A reflector is so constructed and positioned that a spatial distribution of the light emission intensity of the fluorescence light approximates the light emission intensity of the epitaxial light emission structure. The fluorescence light is produced in the ZnSe substrate excited by with the light emission from the epitaxial light emission structure.

Light emitting device

A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The substrate absorbs a part of the blue or green light and makes fluorescence of a longer wavelength. Neutral color light or white light is emitted from the LED. The fluorescent substrate is n-AlGaAs(Si dope), GaP(Zn&plus;O dope), ZnSe(Cu&plus;I, Ag&plus;I, Al&plus;I dope), GaN(O.C.Va(N) dope) or so.

Substrate-fluorescent LED

A white color or neutral color LED having an n-type ZnSe single crystal substrate doped with I, Cl, Br, Al, Ga or In as SA-emission centers and an epitaxial film structure including a ZnSe, ZnCdSe or ZnSeTe active layer and a pn-junction. The active layer emits blue or bluegreen light. The SA-emission centers in the ZnSe substrate convert blue or bluegreen light to yellow or orange SA-emission. The blue or bluegreen light from the epitaxial film structure and the yellow or orange light from the ZnSe substrate synthesize white color light or neutral color light between red and blue.

Growing community of inventors

Itami, Japan

Toshihiko Takebe