Sharp Kabushiki Kaisha Corporation

Toshihiko Sakai

Hideharu Tajima

Go Mori

Masaki Yamamoto

Yasuhiro Harada

Hirohisa Yamada

Nobuyuki Takamori

Liumin Zou

Kazuya Tsujino

Takeshi Kamikawa

Masatomi Harada

Tokuaki Kuniyoshi

Yoshiteru Murakami

Teruaki Higo

Kenichi Higashi

Rihito Suganuma

Tetsuya Hayashi

Noboru Iwata

Takayuki Naka

Masamichi Kobayashi

Chikao Okamoto

Masanori Shimo

Naoki Asano

Takashi Arimoto

Natsuko Fujiwara

Shigemi Maeda

Yoshitaka Yamamoto

Michinobu Mieda

Tetsuya Okumura

Atsushi Etoh

Ikuo Nakano

Kenji Kimoto

Teruhisa Kotani

Yuta Matsumoto

Naoki Koide

Takanobu Sato

Makoto Higashikawa

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Photovoltaic devices and photovoltaic modules

n-type amorphous semiconductor layers () and p-type amorphous semiconductor layers () are alternately disposed on the back surface of a semiconductor substrate () so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (). An electrode () is disposed on the n-type amorphous semiconductor layer (), and an electrode () is disposed on the p-type amorphous semiconductor layer (). A protective film () includes an insulating film, and is disposed on a passivation film (), the n-type amorphous semiconductor layer (), the p-type amorphous semiconductor layer (), and the electrodes (), so as to be in contact with the passivation film (), the n-type amorphous semiconductor layer (), the p-type amorphous semiconductor layer (), and the electrodes ().

Photovoltaic devices, photovoltaic modules provided therewith, and solar power generation systems

Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8&#xd7;10cmor more, and is lower than the dopant concentration of the first concentration layer.

Photoelectric conversion device

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

In a photovoltaic device (), first amorphous semiconductor portions () and second amorphous semiconductor portions () are provided alternately on one of faces of a semiconductor substrate (). Each first amorphous semiconductor portion () has at least one first amorphous semiconductor strip (), and each second amorphous semiconductor portion () has at least one second amorphous semiconductor strip (). A plurality of first electrodes () are provided spaced apart from each other on each first amorphous semiconductor strip (), and a plurality of second electrodes () are provided spaced apart from each other on each second amorphous semiconductor strip ().

Photovoltaic device

A photovoltaic conversion device () includes a semiconductor substrate (), a passivation film (), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (), and electrodes (). The passivation film () is formed on one of the surfaces of the semiconductor substrate (). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate () (Y-axis direction). The p-type amorphous semiconductor strips () have reduced-thickness regions () at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips () (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes () are provided on the p-type amorphous semiconductor strips (), but not in areas where the reduced-thickness regions () have a positive curvature r with respect to the length direction of the reduced-thickness regions (). Electrodes on the n-type amorphous semiconductor strips have a similar arrangement.

Photovoltaic conversion device, photovoltaic module, and solar power generation system

A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic deviceincludes: a semiconductor substrate; an intrinsic amorphous semiconductor layerprovided on the semiconductor substrate; n-type amorphous semiconductor stripscontaining phosphorus as a dopant; and p-type amorphous semiconductor stripscontaining boron as a dopant, the n- and p-type amorphous semiconductor stripsandbeing provided alternately on the intrinsic amorphous semiconductor layeras viewed along an in-plane direction. Each n-type amorphous semiconductor stripincludes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips. Each p-type amorphous semiconductor stripincludes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips. The reduced-thickness region TD(p) of the p-type amorphous semiconductor striphas a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip

A photovoltaic device () includes: an i-type amorphous semiconductor layer () formed in contact with one of the surfaces of a semiconductor substrate (); p-type amorphous semiconductor strips () spaced apart from each other and provided on the i-type amorphous semiconductor layer (); and n-type amorphous semiconductor strips () spaced apart from each other and provided on the i amorphous semiconductor layer (), each n-type amorphous semiconductor strip () being adjacent to at least one of the p-type amorphous semiconductor strips () as traced along an in-plane direction of the semiconductor substrate (). The photovoltaic device () further includes electrodes () as a protection layer formed in contact with the i-type amorphous semiconductor layer () between adjacent p-type amorphous semiconductor strips () and between adjacent n-type amorphous semiconductor strips ().

A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrateand a memberin contact with one surface of the substrate is stacked, and the substrateand the memberin contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrateand the memberin contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate

Film-forming method

An information processing apparatus () includes a processing execution unit () that, if a positional-relationship specification unit () detects that a positional relationship between an electronic device () and the own apparatus is held continuously for a predetermined time or longer, references a processing specification table (), specifies processing, and executes the specified processing.

Information processing apparatus, control method for information processing apparatus, control method for electronic device, and storage medium containing control program

The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.

Photoelectric conversion element and method for manufacturing same

A three-dimensional image output device of the present invention includes a display control section for, in a case where a plurality of three-dimensional effects are set for initial sub-image data for displaying a three-dimensional image to be displayed in the sub-window, supplying, to the display device, a plurality of sub-image data, which are the initial sub-image data for which the respective plurality of three-dimensional effects are set, so that a plurality of three-dimensional images which use the respective plurality of sub-image data are displayed on the display screen.

Three-dimensional image output device, three-dimensional image output method, three-dimensional image display device, and computer readable recording medium

The reliability of a super-resolution optical information recording medium whose capacity can be increased is increased. On an optical information recording medium () according to the present invention, a content is recorded as a pit group formed such that an average length Tm [nm] of a minimum mark length and a minimum space length becomes shorter than an optical system resolution limit, and reading speed information designating a reading speed in a range from 2&#xd7;(4.92&#xd7;Tm/149) [m/s] to less than (10000/60)&#xd7;2&#xd7;&#x3c0;&#xd7;(24/1000) [m/s] is recorded as a reading speed for reproducing the content.

Optical information recording medium, reproduction apparatus, and reproduction method

An image watching glasses identification device(oror) is an image watching glasses identification device(oror) for identifying a pair of shutter glassesthrough which to watch an image displayed on a display device, the image watching glasses identification device(oror) including: an identification information obtaining sectionfor obtaining an identification information item for identifying the pair of shutter glassesand; a display control sectionfor causing the display deviceto display an identification result associated with the identification information item obtained by the identification information obtaining section. This makes it possible to provide an image watching glasses identification device that is capable of causing, when a viewer watches through the pair of image watching glassesthe image displayed on the display device, the display deviceto display the identification result. The identification result enables the viewer to identify the pair of image watching glasses worn by the viewer.

Image watching glasses identification device, image watching system, pair of image watching glasses, image watching glasses identification program, computer-readable recording medium, and display device

An optical recording medium includes: a medium information region on which medium identification information is recorded; a content region on which content information is recorded; and a blank region provided between the medium information region and the content region and in which at least two tracks are provided so as to connect a train of prepits in the medium information region and a train of prepits in the content region. No information is recorded on the blank region. Thus, an optical recording medium is provided in which a region on which medium identification information is recorded and a region on which content information is recorded are different in track pitch and in which a reproduction error hardly occurs when reproduction shifts from the region on which the medium identification information is recorded to the region on which the content information is recorded.

Growing community of inventors

Osaka, Japan

Toshihiko Sakai