Canon Kabushiki Kaisha

Riken Corporation

Tatsuno Corporation

Toshihiko Ouchi

Ryota Sekiguchi

Shintaro Kasai

Takeaki Itsuji

Masao Majima

Kousuke Kajiki

Takeo Ono

Hajime Sakata

Kentaro Furusawa

Michinori Shioda

Takashi Katagiri

Yukio Furukawa

Yasushi Koyama

Masahiro Asada

Yasuhiro Shimada

Mamoru Uchida

Masatsugu Yamashita

Haruko Yoneyama

Takao Yonehara

Toshihiko Takeda

Takayuki Yagi

Futoshi Hirose

Natsuhiko Mizutani

Norio Kaneko

Takehiko Kawasaki

Mitsuro Sugita

Jun Nitta

Taihei Mukaide

Masahiro Takezawa

Aya Imada

Masatoshi Watanabe

Yoichiro Handa

Noriaki Ohguri

Seiji Mishima

Mitsuru Ohtsuka

Jungo Miyazaki

Ouichi Kubota

Yoshitaka Tsugumi

Takayuki Koizumi

Yoshimi Oto

To provide a safety joint housing device for preventing a plug or a filling hose from being locked in a lower opening of a casing when the safety joint is separated, thereby preventing a filling device from falling over and being damaged.

Safety joint housing device

A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.

Terahertz-wave generating element terahertz-wave detecting element and terahertz time-domain spectroscopy device

Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixelhaving an electromagnetic wave detecting elementconfigured to detect an electromagnetic wave; a switchconfigured to read out a signal from the pixel; a signal generating unitconfigured to generate a signalhaving a predetermined period, wherein the pixel is connected to a transmission linefor supplying, to the pixel, the signal having the predetermined period, and to a scanning lineandfor reading out the signal from the pixel through the switch, andthe pixel has a frequency converting elementconfigured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.

Image forming apparatus and imaging system

A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.

Sensor and information acquisition apparatus using sensor

A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.

Semiconductor device and method for manufacturing the same

A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/etimes the electric field intensity of the terahertz wave at the interface.

Photoconductive device, measurement apparatus, and manufacturing method

A terahertz wave generation element is provided, which includes: an optical waveguide including a core of electro-optic crystal; an optical coupler for extracting a terahertz wave generated from the optical waveguide when light propagates in the optical waveguide to a space; and a reflecting layer disposed on the opposite side to the optical coupler with respect to the core of the optical waveguide, so as to reflect the generated terahertz wave. According to the element, it is possible to provide a generation element that can generate a relatively high intensity terahertz wave efficiently by photoexcitation or generate a terahertz wave having a relatively narrow pulse width, so as to flexibly control waveform shaping of the generated terahertz wave.

Terahertz wave generation element, terahertz wave detection element, and terahertz time domain spectroscope device

A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.

Photo-semiconductor device and method of manufacturing the same

The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.

Electromagnetic wave generation device and detection device

Terahertz-wave generating element, terahertz-wave detecting element, and terahertz time-domain spectroscopy device

The present invention provides an apparatus and a method for transforming a time waveform of an electromagnetic wave into a time waveform suited for signal processing and the like so as to measure the time waveform. A wavelet transform is performed on a first time waveform of an electromagnetic wave, such as a terahertz wave, measured in advance, and a second time waveform suited for signal processing and having a high correlation with a mother wavelet used in the wavelet transform is formed by controlling a wavelet expansion coefficient. In a second measurement process and onward of a target object, a transforming unit, such as a bias voltage controller, is used to transform the electromagnetic wave into a transformed time waveform so as to measure the time waveform.

Apparatus and method for measuring electromagnetic wave

A terahertz-wave element includes a waveguide () that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member () that causes a terahertz wave to enter the waveguide (). The propagation state of the light propagating through the waveguide () changes as the terahertz wave enters the waveguide () via the coupling member ().

Terahertz-wave element, terahertz-wave detecting device, and terahertz time-domain spectroscopy system

To provide an electromagnetic pulse transmitting apparatus and a tomography apparatus capable of shortening an electromagnetic pulse. The apparatus performs processing such that two electromagnetic pulse portions emitted to an object have an electric field intensity of mutually opposite polarity and the time difference between pulse peaks of the two electromagnetic pulse portions is a time difference within a time of a pulse width.

Tomography apparatus and electromagnetic pulse transmitting apparatus

A sensor device has an optical waveguide containing an electro-optic crystal for propagating light, a coupler provided adjacent to the optical waveguide to propagate a terahertz wave generated from the electro-optic crystal as a result of the propagation of light in the optical waveguide, and a detector for detecting the terahertz wave propagating through the coupler or the light propagating through the optical waveguide. The terahertz wave is totally reflected in a section of the coupler opposite to a section where the coupler is adjacent to the optical waveguide while passing through and propagating in the optical waveguide, and in the total reflection section, the terahertz wave interacts with a subject placed close to the total reflection section.

Sensor device

Growing community of inventors

Sagamihara, Japan

Toshihiko Ouchi