Fujitsu Corporation

Fuji Photo Film Company, Limited

Toshihiko Osada

Yoshiaki Sakamoto

Tomohisa Shingai

Shuji Koike

Seigen Otani

Kazuaki Kurihara

Yasuo Furukawa

Yuji Tanaka

Kenji Sugishima

Ichiro Honjo

Masaki Yamabe

Yasutaka Ban

Yoshitaka Kitamura

Takaharu Shima

Yuji Akazawa

Masayuki Hattori

A method of producing an ink-jet recording head using ion milling is provided. The method includes the steps of forming a piezoelectric layer subsequent to an electrode layer on a substrate by using a thin-film deposition technology, forming an energy-generating element for generating energy for ink ejection by etching the electrode layer and the piezoelectric layer simultaneously by ion milling, and removing a fence formed by deposits of mixed fine powders including those etched off the electrode layer and the piezoelectric layer.

Method of producing ink-jet recording head

An ink jet head having a plurality of nozzles discharging ink supplied from an ink supply unit. The ink jet head includes a head main body including a plurality of pressure chambers ( ) provided for the respective nozzles, in which ink is filled, and a plurality of pressure units provided for the respective pressure chambers ( ), each of the pressure units applying pressure to the pressure chamber ( ) to discharge the ink in the pressure chamber ( ) from the nozzle, an individual electrode ( ) provided for each of the pressure units to drive the pressure unit, at least one contact ( ) connected to an external connection wiring member supplying a signal for controlling the pressure unit, and a wiring pattern ( ) formed into a thin film to electrically connect the individual electrode ( ) to the contact ( ), thereby facilitating connection to the external connection wiring member, improving the fabrication efficiency and the reliability.

Ink jet head and printing apparatus

Ink-jet recording head and method of producing the same

An X-ray lithography system, in which an X-ray beam is separated from synchrotron radiation beams and reflected by a scanning mirror which vertically scans the reflected X-ray beam. The X-ray is irradiated into an exposure chamber via a beryllium window, which is vertically oscillated in such a manner that the beryllium window is shifted up and down in synchronization with the scanning operation of the X-ray beam.

X-ray lithography system

A rotary anode assembly for an X-ray source, having a annular V-groove target portion for generating a desired characteristic X-ray emission by an electron beam bombardment applied thereto, wherein the V-grooved target portion is formed from a pair of target members each being formed into a body of rotation with respect to the axis of rotation of the assembly and having a surface including therein a coaxially-formed annular tapered portion. The target members are combined together so that the annular tapered surface portions face to each other with a predetermined angle therebetween, thereby constituting the annular V-groove. The annular V-groove target portion is formed in the peripheral surface of the rotary anode assembly or in the side surface of the anode assembly, which is perpendicular to the axis of rotation. The V-groove target portion is cooled by fluid coolant circulated through the inner space between the target member and the corresponding associated supporting member having a plurality of channels provided for allowing the fluid coolant to be supplied to the space.

Rotary anode assembly for an X-ray source

When an electron beam is projected onto a desired pattern region, the acceleration voltage of the electron beam is set at a value at which the distribution of the scattered electrons in a predetermined region is substantially uniform. The exposure dosage is determined according to the ratio between the total area of the patterns to which the electron beam is projected in the predetermined region and the area of the predetermined region. The exposure time of the electron beam is determined in dependence upon a dose amount and the electron beam current. The exposure time of the electron beam is changed when pattern data is changed and a correction factor is calculated accordingly.

Electron beam exposing method

Disclosed is a method for exposing an electron beam of a beam-shaping type, wherein the electron beam can be shaped into polygon having desired size by passing through a first and a second apertures. The position of the first or the second aperture tends to be deviated from its design position due to heat, resulting in a deviation of the electron beam. According to the invention, the offset value of the real image formed on the second aperture, with respect to the ideal image, is automatically determined by detecting a current passing through the second aperture. During an electron-beam exposure for patterning, the amount of deflection of the electron beam is corrected by taking the previously obtained offset value into consideration.

Method for exposing an electron beam

Growing community of inventors

Ebina, Japan

Toshihiko Osada