Seiko Instruments Inc

Toshihiko Omi

Kazutoshi Ishii

Takaaki Hioka

Yoichi Mimuro

Satoshi Machida

Tadao Akamine

Hitomi Watanabe

Naoto Saitoh

Keisuke Uemura

Isamu Fujii

Toshiyuki Uchida

Taro Nakata

Nobuo Takei

A Hall sensor has a P-type semiconductor substrate and a Hall sensing portion having a square shape and an N-type conductivity disposed on a surface of the semiconductor substrate. The Hall sensor includes Hall voltage output terminals having the same shape with each other, and control current input terminals having the same shape with each other. The Hall voltage output terminals are disposed at respective ones of four vertices of the Hall sensing portion. The control current input terminals include pairs of control current input terminals disposed at respective ones of the four vertices of the Hall sensing portion and arranged on both sides of respective ones of the Hall voltage output terminals in spaced apart relation from the Hall voltage output terminals so as to prevent electrical connection between the control current input terminals and the Hall voltage output terminals.

Hall sensor for eliminating offset voltage

Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. The Hall element includes: a Hall sensing portion having a shape of a cross and four convex portions; Hall voltage output terminals which are arranged at the centers of the front edges of the four convex portions, respectively; and control current input terminals which are arranged on side surfaces of each of the convex portions independently of the Hall voltage output terminals. In this case, the Hall voltage output terminal has a small width and the control current input terminal has a large width.

Hall sensor

A photoelectric conversion device has pixel comprised of a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type disposed in the first semiconductor region. A first diffusion region of the first conductivity type is held at a predetermined potential, covers entirely the first semiconductor region, and covers only a part of an upper portion of the second semiconductor region. A second diffusion region of the second conductivity type covers a part of the upper portion of the second semiconductor region except for the part of the upper portion of the second semiconductor region covered by the first diffusion region. A thick oxide film covers entirely the first diffusion region and covers the upper portion of the second semiconductor region except for the part of the upper portion of the second semiconductor region covered by the second diffusion region.

Photoelectric conversion device and image sensor using the same

Provided is a photodetection device which is small in size and has excellent sensitivity. The photodetection device () puts cathode terminals of photodiodes (and) having different spectral characteristics, or a photodiode () provided with an optical filter and a photodiode () provided with a light shield layer, into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. Since the photodiodesandstore electric charges, even if a photocurrent is small, it is possible to store the photocurrent to obtain the electric charges required for detection, permitting achievement of downsizing and high detection performance of the semiconductor device on which the photodiodesandare formed. It is also possible to realize a wide dynamic range by making the electric charge storage time variable according to the light intensity, to suppress electric power consumption by intermittently driving an element required for differential detection at the time of differential detection, and to reduce an effect from flicker by averaging the output.

Photodetection device and image display device

Provided is a photodetection device which is small in size and has excellent sensitivity. A photodetection device puts cathode terminals of photodiodes having different spectral characteristics into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. The photodiodes employ a system of storing electric charges, and hence even if a photocurrent is small, the photocurrent may be stored to obtain the electric charges required for detection, and the downsizing and high detection performance of a semiconductor device that forms the photodiodes may be achieved. Further, a wide dynamic range may be realized with an electric charge storage time being variable according to the light intensity, to intermittently drive an element required for difference detection at the time of difference detection so as to suppress electric power consumption, or to average the output so as to reduce flicker.

Optical detection device, and image display device

A thermal head driving IC for supplying voltage to a plurality of heating resistors each controlled by a driving MOS transistor includes a switch for making and breaking electrically between a substrate and a source of the plurality of driving MOS transistors. In a case where the plurality of heating resistors are activated, the plurality of driving MOS transistors are turned on and the switch is turned off, whereby the substrate potential is floated. As a result, the substrate potential is forward-biased against the source by a substrate current generated in a high-electric-field depletion region near the drain, and a parasitic bipolar transistor turns on, whereby both the plurality of driving MOS transistors and the parasitic bipolar transistor turn on. In a case where the plurality of heating resistors are not activated, a signal for turning off the plurality of driving NMOS transistors is given, and the switch is turned on.

Thermal head driving IC and method of controlling the same

A plurality of line image sensor ICsare formed to be arranged in X, Y directions with gaps therebetween on a semiconductor substrate. The gaps between the line image sensor ICsbecome scribe linesX,Y. A pattern of dummy interconnectsis formed in a region where a short sideS of an arbitrary line image sensor ICis opposed to a short sideS of another line image sensor ICadjacent to the arbitrary line image sensor ICin the X direction in a region where the scribe lineY is formed. When a material gas is generated by plasma CVD, the material gas is uniformly deposited not only on the line image sensor ICs, but also on the dummy interconnects. Consequently, a protective film with a uniform thickness can be formed on the line image sensor ICs

Photoelectric conversion device and method of producing the same, and method of producing line image sensor IC

Provided is a photoelectric conversion device including: a semiconductor substrate () of a first conductivity type; a photoelectric conversion region () of a second conductivity type which is located in the semiconductor substrate (), the second conductivity type being opposite to the first conductivity type; and a buried layer () of the first conductivity type which is formed in an inner portion of the semiconductor substrate () to cover a lower side of the photoelectric conversion region (), the buried layer () including a higher impurity concentration than the semiconductor substrate ().

Photoelectric conversion device, image sensor, and method of manufacturing a photoelectric conversion device

A photoelectric conversion device () includes a first conductivity type first semiconductor region () located in a pixel region (), a second conductivity type second semiconductor region () provided in the first semiconductor region (), for storing a signal charge, interconnecting portions (and) for connecting the second semiconductor region () with a circuit element provided outside the pixel region (), and an organic film () which is provided above a portion located in the pixel region () in the interconnecting portions (and) through an insulating protective film () and held at a predetermined potential. The organic film () is made of a thermoplastic polyimide resin containing one of a conductive particle and a conductive fiber.

Photoelectric conversion device and image sensor

An N-channel MOS transistor of a semiconductor device having a high withstand voltage employs a drain structure with a low concentration and a large diffusion depth, which causes a problem in that a sufficiently high withstand voltage cannot be obtained due to a parasitic NPN transistor formed among the drain, the well, and the semiconductor substrate which are arranged in the stated order. According to the present invention, provided are a semiconductor device, including: a semiconductor substrate; an epitaxial layer having an electric polarity identical with that of the semiconductor substrate, which is formed on the semiconductor substrate; a buried diffusion layer having the electric polarity different from that of the semiconductor substrate, which is formed between the semiconductor substrate and the epitaxial layer; and a well region having the electric polarity identical with that of the buried diffusion layer, which is formed above the buried diffusion layer and is electrically connected therewith, in which a MOS transistor is formed in a well having a structure in which the buried diffusion layer is electrically connected with the well region, and a manufacturing method therefor.

Semiconductor integrated circuit device having MOS transistor

A high-sensitive optical sensor is provided. In the optical sensor in which MOS transistors and a semiconductor light-receiving element are integrated, the light-receiving element includes a PN junction, and charges generated by the irradiation with light are accumulated at the PN junction, the PN junction of the light-receiving element is isolated from well regions of the MOS transistors.

Optical sensor and manufacturing method of the same

To provide a semiconductor device in which reduction of a variation in resistance value of a polycrystalline silicon film resistor is promoted. In a semiconductor device and a manufacturing method therefor according to the present invention, when the polycrystalline silicon film resistor is formed, a construction thereof is achieved by determining an implantation amount of an impurity implanted into the polycrystalline silicon film resistor through a novel technique to constitute a semiconductor integrated circuit device superior in performance.

Semiconductor device having polycrystalline silicon film resistor and manufacturing method therefor

A semiconductor device is provided in which each of contacts between a source and a drain of a MOS transistor and a metallic wiring is either a contact having an arbitrary one side longer than the other side, or source contacts and well contacts are made batting contacts each having an arbitrary one side of a diffusion region having the same polarity as that of a well shorter than the other side. Thus, the contact shape is longitudinal in a transistor width direction, which makes it possible that a large current is caused to flow with a small interval of gates thereof.

Semiconductor device

There is provided a semiconductor integrated circuit device with high electrostatic resistance. A semiconductor device is provided with a transistor for input-output protection having a desired size in which its channel length is varied with respect to a channel width direction.

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Chiba, Japan

Toshihiko Omi