Matsushita Electric Industrial Co., Ltd.

Other

Renesas Technology Corp.

Matsushita Electronics Corporation

Ekc Technology Inc.

Nichiei Industry Co., Ltd.

Toshihiko Nagai

Yasuhiro Asaoka

Hiroshi Tanaka

Seiji Muranaka

Naoki Yokoi

Yasutoshi Okuno

Tomoko Suzuki

Itaru Kanno

Akihiko Tsuzumitani

Yoshiharu Hidaka

Yuichi Miyoshi

Toshitaka Hiraga

Tetsuo Aoyama

Etsuro Kishio

Kiyohito Shimura

Masahiko Higashi

Yoshi-ichi Seto

Shuuichi Fukuhara

A method for analyzing a protein and a peptide, includes: providing a capillary for isoelectric focusing; providing a capillary device for separation and analysis having the capillary and a solid-phase extraction column being unified as a single tube-like structure; providing an electrophoresis instrument having the capillary device and the mechanism regulating the pressure difference at both ends of the capillary device; introducing a sample containing a target protein or peptide into the solid-phase extraction column to let the target protein or peptide be adsorbed on the column, and filling the capillary device with a carrier ampholyte solution; starting separation by isoelectric focusing after eluting the target protein or peptide by filling the solid-phase extraction column with electrode solution or acid or base solution, or after firstly eluting the target protein or peptide with an eluting solution containing carrier ampholyte and secondly filling the solid-phase extraction column with electrode solution or acid or base solution; and focusing the eluted target protein or peptide in the capillary for isoelectric focusing.

Capillary device for separation and analysis, microfluidic chip for separation and analysis, analysis method for proteins or peptides, electrophoresis instrument, and microfluidic chip electrophoresis instrument for separation and analysis

The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH-. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.

Cleaning composition for removing resists and method of manufacturing semiconductor device

A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.

Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method

After a metal layer is formed on a dielectric film, the metal layer is subjected to an oxidation process using a liquid having oxidizing power, thereby forming an adhesion layer. Then, an electrode or wiring is formed on the adhesion layer.

Method for manufacturing semiconductor device

In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.

Substrate cleaning method and method for producing an electronic device

A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.

Method of fabricating semiconductor device and semiconductor device

Disclosed is a method for removing Pt (or Pt&mdash;Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt&mdash;Ir film, and a Ba&mdash;Sr&mdash;Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.

Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device

After forming a processed film onto the underlying film formed on the substrate, the processed film is dry etched using a mask pattern so as to form an etched pattern. After the reaction product deposited on a wall of the etched pattern is removed by using the first cleaning solution having relatively low power to etch the processed film and the second cleaning solution having relatively high power to etch the processed film in that order, the etched pattern or its vicinity is rinsed with water.

Method of removing reaction product due to plasma ashing of a resist pattern

Growing community of inventors

Osaka, Japan

Toshihiko Nagai