Hitachi, Ltd.

Japan Display Inc.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Toshihiko Itoga

Yasukazu Kimura

Takuma Nishinohara

Hajime Akimoto

Takuo Kaitoh

Kiyoshi Ogata

Makoto Ohkura

Kazuhiko Horikoshi

Takuo Tamura

Takahiro Kamo

Yoshinobu Kimura

Hironobu Abe

Eiji Oue

Yoichi Takahara

Hironaru Yamaguchi

Masakazu Saitou

Takeo Shiba

Norio Oku

Toshiki Kaneko

Masato Hiramatsu

Jun Fujiyoshi

Yoshiaki Toyota

Ryoji Oritsuki

Miwako Nakahara

Yasushi Nakano

Takeshi Satou

Hideo Sato

Hiroshi Kageyama

Masahiro Maki

Daisuke Sonoda

Hidekazu Miyake

Takayuki Nakao

Katsumi Matsumoto

Takeshi Noda

Kozo Yasuda

Takeshi Kuriyagawa

Takahide Kuranaga

Hiroki Nakaie

The purpose of the present invention is to form a semiconductor device in which an active area laminated on a PZT (lead zirconate titanate (PbZrTiO) sensor having a piezoelectric effect. The main structure of the present invention is as follows. A semiconductor device having a PZT (lead zirconate titanate (PbZrTiO)) sensor including: the PZT sensor including a lower electrode formed on a glass substrate, a PZT, an upper electrode, a first inorganic insulating film covering the upper electrode, and an upper wiring formed on the first inorganic insulating film and connected to the upper electrode through a first through-hole formed in the first inorganic insulating film; in which a polyimide film is formed over the PZT sensor; a plurality of TFTs are formed on the polyimide film, and a thickness of the polyimide film is 5 μm or more.

Semiconductor device

A display device includes a substrate having flexibility, a transistor having a gate insulating film and further having a semiconductor layer and a gate electrode that sandwich the gate insulating film, the transistor formed in an area where the substrate is bent, and a gate wiring line so formed on the substrate as to be connected to the gate electrode, and the gate electrode has an area that is present in an area where the gate electrode overlaps with the semiconductor layer and is thinner than at least part of the gate wiring line.

Semiconductor device including a flexible substrate

A display device includes: a flexible substrate; a pixel over the flexible substrate, the pixel including a transistor and a display element; a first wiring for transmitting a signal to the pixel, the first wiring extending in a first direction; a second wiring extending in a second direction intersecting the first direction; an inorganic insulating layer on a higher level than the first wiring or the second wiring; and an organic insulating layer on a higher level than the inorganic insulating layer, wherein the inorganic insulating layer has an opening exposing a part of the upper surface of the first wiring or the second wiring is exposed, and the organic insulating layer is provided in such a way as to fill the opening.

Flexible display device

Flexible semiconductor device and flexible display device

A manufacturing method of an organic EL display device according to an embodiment of the present invention includes: disposing a first organic substrate having flexibility on a glass substrate; disposing a barrier layer on the first organic substrate; disposing a second organic substrate having flexibility on the barrier layer such that a thickness of a terminal section area is thinner than a thickness of a pixel section area, or at least a part of the terminal section area is not covered; disposing a pixel control section on the terminal section area of the second organic substrate and a pixel generating section on the pixel section area, respectively; disposing a circuit section at least on the terminal section area, the circuit section having a thin film transistor, wherein the circuit section is formed directly on the second organic substrate.

Organic electro-luminescence display device and manufacturing method of an organic electro-luminescence display device

A display device includes a substrate having an insulating surface; a plurality of pixel electrodes on the insulating surface, the plurality of pixel electrodes located away from each other; a first insulating layer covering an end of each of the pixel electrodes and exposing a part of a top surface of each of the pixel electrodes; and an organic layer provided on each of the pixel electrodes, the organic layer including a light emitting layer. As seen in a plan view, the first insulating layer includes a plurality of first regions, each of the plurality of first regions being around the exposed part of the top surface of the pixel electrodes, and a second region located between two adjacent first regions, the second region including a recessed portion.

Display device

A display device is provided including a first substrate comprising a resin material provided with a plurality region provided with a plurality of pixels including a display device, and a second substrate provided facing the first substrate and installed with the pixel region, wherein an outer periphery side surface of the first substrate having a taper shape and including a barrier layer covering an upper layer, lower layer and the outer periphery side surface of the first substrate.

Display device including tapered substrate

A display device includes a first substrate having flexibility, a second substrate having flexibility arranged facing the first substrate, a light emitting element arranged in a display region of the first substrate, and a filling material covering the light emitting element and extending from the display region to an end part of the first substrate and the second substrate. The filling material is a solid and is provided on the inner side from the first substrate and second substrate.

The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiOfilm, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Display device and fabrication method thereof

Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.

The present invention provides an active matrix display device capable of raising its integration density by reducing the drive circuit area on the active matrix substrate. A semiconductor film presents in the boundary between a quasi-strip crystalline semiconductor film and another semiconductor film is used to form conductive lines, resistors, source/drain electrodes and the like which are respectively connected to thin film transistors formed using the quasi-strip crystalline semiconductor film.

Display device using first and second semiconductor films of different crystallinity and boundary section therebetween

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Chiba, Japan

Toshihiko Itoga