Sony Corporation

Sony Semiconductor Solutions Corporation

Nissan Motor Company Limited

Sony Group Corporation

Nippon Kayaku Kabushiki Kaisha

Nihon Radiator Co., Ltd.

Toshihiko Hayashi

Kenichi Murata

Masahiro Joei

Shintarou Hirata

Hiroyasu Matsugai

Minoru Ishida

Nobutoshi Fujii

Masanori Iwasaki

Shuzo Sato

Satoru Wakiyama

Hiroshi Tazawa

Suguru Saito

Kan Shimizu

Takuya Nakamura

Hiroyuki Itou

Keiji Ohshima

Toshiaki Shiraiwa

Naoki Jyo

Yoshiharu Kudoh

Yoichi Otsuka

Yoshitomi Matsuzaki

Hiroshi Takahashi

Hiroshi Nakano

Atsushi Yamamoto

Koji Watanabe

Kensaku Maeda

Taku Umebayashi

Kenichi Aoyagi

Ikuo Yoshihara

Hiroshi Yoshioka

Iwao Yagi

Kiyotaka Tabuchi

Masaya Nagata

Munekatsu Fukuyama

Yusuke Moriya

Makoto Morita

Keishi Inoue

Katsunori Hiramatsu

Naoto Sasaki

Yoshiyuki Enomoto

Kazunori Nagahata

Tadayuki Kimura

Ryosuke Suzuki

Yuji Uesugi

Tokihisa Kaneguchi

Iwao Sugiura

Akiko Hirata

Kan Saiga

Arihiro Tomura

Yoshiyuki Ohba

Takamichi Sato

Takayoshi Honda

Isaya Kitamura

Tomiyuki Yukawa

Ryotaro Takaguchi

Hideki Tsujiai

Hiroshi Tanaka

Hidemitsu Sugihara

Kazuhiro Tokunaka

Yasutada Imamura

Mayoshi Aonuma

Yusaku Kobayashi

Ryoichi Kawahara

Masato Shida

Keizou Kushibiki

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

Imaging element and imaging device

Provided is a light detection apparatus with high functionality. The light detection apparatus includes an effective region provided with a photoelectric converter that detects irradiation light and performs photoelectric conversion, and a peripheral region provided adjacent to the effective region. The photoelectric converter has a stacked structure including a first photoelectric conversion unit, a second photoelectric conversion unit, and a first optical filter. The first photoelectric conversion unit detects light in a first wavelength range of the irradiation light and performs photoelectric conversion. The second photoelectric conversion unit is provided so as to overlap with the first photoelectric conversion unit, detects light in a second wavelength range of the irradiation light, and performs photoelectric conversion. The first optical filter is provided between the first photoelectric conversion unit and the second photoelectric conversion unit and through which the light in the second wavelength range transmits more easily than the light in the first wavelength range. The peripheral region is provided with a second optical filter through which the light in the second wavelength range transmits more easily than the light in the first wavelength range.

Light detection apparatus, light detection system, electronic equipment, and mobile body

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Solid-state imaging element and electronic device

An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

Image pickup element, stacked image pickup element, and solid image pickup apparatus

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

Semiconductor device and method of manufacturing the same

Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

There is provided a camera module including a stacked lens structure including a plurality of lens substrates. The plurality of lens substrates includes a first lens substrate including a first lens that is disposed at an inner side of a through-hole formed in the first lens substrate, and a second lens substrate including a second lens that is disposed at an inner side of a through-hole formed in the second lens substrate, wherein the first lens substrate is directly bonded to the second lens substrate. The camera module further includes an electromagnetic drive unit configured to adjust a distance between the stacked lens structure and a light-receiving element.

AF module, camera module, and electronic apparatus

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

Semiconductor device and method of manufacturing thereof

A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Stacked lens structure, method of manufacturing the same, and electronic apparatus

Provided is a solid-state image sensor that includes a micro lens through which incident light is condensed, a photoelectrical conversion unit that generates electric charge based on the condensed incident light, and a translucent plate formed between the micro lens and the photoelectrical conversion unit and including a light-shielding wall provided between a translucent part provided for each pixel and the pixel. An antireflection film including films of two layers or more is formed between the light-shielding wall and the translucent part.

Solid-state image sensor and electronic device

Growing community of inventors

Kanagawa, Japan

Toshihiko Hayashi