Sharp Kabushiki Kaisha Corporation

Other

Fujitsu Corporation

Toshihiko Fukushima

Masaru Kubo

Takahiro Takimoto

Isamu Ohkubo

Hiroki Nakamura

Kazuhiro Natsuaki

Shigeki Hayashida

Yuji Asano

Takao Setoyama

Morio Katou

Makoto Hosokawa

Akifumi Yamaguchi

Seizo Kakimoto

Tatsuya Morioka

Yoshihiko Tani

Naoki Fukunaga

Zenpei Tani

Haruhiko Deguchi

Tomohisa Komoda

Toshifumi Yoshikawa

An optical distance measuring sensor includes a light receiving element arranged on the same plane as a light emitting element. The light receiving element includes a light receiving unit having a plurality of cells and collecting the light emitted from the light emitting element and reflected by a target object, a flash memory unit storing a predetermined position on the light receiving unit, and a signal processing circuit unit sensing the collection position of the light on the light receiving unit, and measuring the distance to the target object based on a relative positional relationship between the predetermined position stored in the flash memory unit and the collection position of the light on light receiving unit.

Optical distance measuring sensor and electronic device

In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.

Lateral double-diffused field effect transistor and integrated circuit having same

The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a gate electrode formed in such a position as it covers from part of the body diffusion region to part of the drift region located outside the diffusion region via an insulating film. The MOS transistor further includes a source diffusion region of the first conductive type and a drain diffusion region of the first conductive type formed on top of the body diffusion region and top of the drift region, respectively, both of which correspond to both sides of the gate electrode. The drain diffusion region includes a deep diffusion portion which has a 1/1000 or more concentration of a peak concentration of the source diffusion region and which is positioned deeper than the source diffusion region.

Lateral double-diffused MOS transistor and manufacturing method therefor

A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

Light receiving element, light detector with built-in circuitry and optical pickup

A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.

Semiconductor device with built-in light receiving element, production method thereof, and optical pickup incorporating the same

A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.

Semiconductor device with reduced parasitic capacitance between impurity diffusion regions

A circuit-containing photodetector is provided which can have a high sensitivity and response to light of a short wavelength and can be manufactured in a good yield. The circuit-containing photodetector includes a semiconductor substrate, a semiconductor layer formed thereon, and a conductive impurity region formed in the semiconductor layer for transmitting a signal. In the semiconductor layer, a trench is formed to have a depth to reach the substrate. An impurity region of a photodetector element is formed at the surface of the semiconductor substrate exposed at the bottom of the trench. A signal processing circuit for processing an electric signal from the photodetector element is formed on the semiconductor layer. The conductive impurity region for transmitting the electric signal from the photodetector element is formed to extend from the bottom of the trench to the upper surface of the semiconductor layer.

Circuit-containing photodetector, method of manufacturing the same, and optical device using circuit-containing photodetector

A circuit-incorporating light receiving device comprises a first semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a diffusion region of the second conductivity type, provided in a first portion of the second semiconductor layer of the first conductivity type, a circuit element provided in the first portion of the first semiconductor layer of the first conductivity type and a second portion of the second semiconductor layer of the first conductivity type. The second semiconductor layer of the first conductivity type and the diffusion region of the second conductivity type form a light detection photodiode portion, and the diffusion region of the second conductivity type has a diffusion depth less than or equal to a penetration depth of short-wavelength signal light.

Circuit-incorporating light receiving device

A thermal-type infrared radiation detector cell includes a diaphragm structural body that forms a gap of a predetermined width over a semiconductor substrate. The diaphragm structural body is capable of either providing metal wiring films that doubles as an infrared radiation reflector film or providing a high refractive index film having a thickness set to satisfy the expression d&equals;&lgr;&times;&lcub;1/(4&times;n)&rcub;, where n is the refractive index of the high refractive index film, and &lgr; is the wavelengths of infrared rays. As a result, in the former option, no separate infrared radiation reflector film is required, whilst in the latter no separate infrared radiation absorption layer is required. This facilitates the manufacturing process and improves the sensitivity in infrared radiation detection.

Thermal-type infrared radiation detector cell and image capture device incorporating the same

A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.

Circuit-incorporating photosensitive device

A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

Light sensitive element and light sensitive element having internal circuitry

A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.

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Nara, Japan

Toshihiko Fukushima