Japan Display Inc.

Toshihide Jinnai

Akihiro Hanada

Hajime Watakabe

Ryo Onodera

Isao Suzumura

Tomoyuki Ito

Hirofumi Mizukoshi

Koji Sato

Yasunori Fukumoto

Naoya Ito

A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Display device and semiconductor device

An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.

Semiconductor device

There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

Oxide semiconductor device

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductoris covered by a first insulating film, a first drain electrodeis connected to the oxide semiconductorvia a first through holeformed in the first insulating film, a first source electrodeis connected to the oxide semiconductorvia second through holeformed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrodeand the first source electrode, a drain wiring connectsto the first drain electrodevia a third through holeformed in the second insulating film, a source wiringis connected to the first source electrodevia a fourth through holeformed in the second insulating film.

Method for producing semiconductor device

Semiconductor device and method of manufacturing semiconductor device

A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductoris covered by a first insulating film, a first drain electrodeis connected to the oxide semiconductorvia a first through holeformed in the first insulating film, a first source electrodeis connected to the oxide semiconductorvia second through holeformed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrodeand the first source electrodea drain wiring connectsto the first drain electrodevia a third through holeformed in the second insulating film, a source wiringis connected to the first source electrodevia a fourth through holeformed in the second insulating film.

Growing community of inventors

Tokyo, Japan

Toshihide Jinnai