Kabushiki Kaisha Toshiba

Maruyama Mfg. Co., Ltd.

Toshihide Ito

Shinya Nunoue

Yukio Nakabayashi

Tatsuo Shimizu

Hiroshi Katsuno

Johji Nishio

Chiharu Ota

Toshiyuki Oka

Taisuke Sato

Satoshi Mitsugi

Shigeya Kimura

Jumpei Tajima

Hiroshi Ono

Kenjiro Uesugi

Shigeto Fukatsu

Ryosuke Iijima

Koichi Tachibana

Takahiro Sato

Shunsuke Asaba

Daisuke Matsushita

Kiwamu Sakuma

Yuichiro Mitani

Yasushi Nakasaki

Koichi Kato

Kotaro Zaima

Kouichi Muraoka

Izumi Hirano

Power sprayer

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10cm. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10cm, and a carbon concentration at the position is equal to or less than 1×10cm.

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10cm. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10cmand a carbon concentration at the first position is equal to or less than 1×10cm, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1×10cm.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1&#xd7;10cm. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1&#xd7;10cm, and a carbon concentration at the position is equal to or less than 1&#xd7;10cm.

This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1&#xd7;10cm. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Zin a portion is not more than 1&#xd7;10cm. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1&#xd7;10cm, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1&#xd7;10cm.

Semiconductor device, semiconductor device manufacturing method, inverter circuit, driver device, vehicle, and elevator

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1&#xd7;10cm. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1&#xd7;10cmand a carbon concentration at the first position is equal to or less than 1&#xd7;10cm, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1&#xd7;10cm.

According to one embodiment, a semiconductor device includes a silicon carbide member, first, second, and third electrodes, and a first insulating member. The silicon carbide member includes first, second, and third silicon carbide regions. The first silicon carbide region includes first, second, third, and fourth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the third partial region and the first electrode. The second silicon carbide region includes first and second semiconductor regions. The third silicon carbide region includes third and fourth semiconductor regions. The first insulating member includes first, second, and third insulating regions. The second electrode is electrically connected to the first silicon carbide region. The third and fourth partial regions are between the second and first electrodes. The third electrode is electrically connected to the second silicon carbide region.

Semiconductor device

According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include performing a first heat treatment of a first film at a first temperature not less than 500&#xb0; C. and not more than 900&#xb0; C. in a first atmosphere including oxygen. The first film includes silicon and oxygen and is deposited on a semiconductor member including silicon carbide. The method can include performing, after the first heat treatment, a second heat treatment of the first film at a second temperature not less than 1200&#xb0; C. but less than 1400&#xb0; C. in a second atmosphere including nitrogen.

Method for manufacturing semiconductor device

A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

According to one embodiment, a semiconductor light emitting element () includes a metal layer (), a first to a fourth semiconductor layers (), a first and a second light emitting layers (), a first to a sixth electrodes (e-e), and a first inter-element interconnect section (). The first semiconductor layer () includes a first to a third regions (r-r). The second semiconductor layer () is provided between the first region (r) and the metal layer () and between the second region (r) and the metal layer (). The third semiconductor layer () includes a fourth to a sixth regions (r-r). The fourth semiconductor layer () is provided between the fourth region (r) and the metal layer () and between the fifth region (r) and the metal layer (). The first inter-element interconnect section () is provided between the second electrode (e) and the metal layer () and between the sixth electrode (e) and the metal layer ().

Semiconductor light emitting element

A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, a semiconductor light emitting device includes a first metal layer, a second metal layer, a third metal layer, a semiconductor light emitting unit and an insulating unit. The semiconductor light emitting unit is separated from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, and is light-reflective. The second metal layer includes a contact metal portion, and a peripheral metal portion. The third metal layer is light-reflective. The third metal layer includes an inner portion, a middle portion, and an outer portion. The insulating unit includes an first insulating portion, a second insulating portion, and a third insulating portion.

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Tokyo, Japan

Toshihide Ito