Japan Science and Technology Agency

Toshiharu Teranishi

Yutaka Majima

Kazuhiko Matsumoto

Yasuhide Ohno

Kenzo Maehashi

Shinya Kano

Yasuo Azuma

Tomofumi Susaki

Shuhei Takeshita

Kosuke Matsuzaki

Guillaume Hubert Frederic Hackenberger

Masanori Sakamoto

Daniel Eduardo Hurtado Salinas

Eiki Aoyama

Kosuke Maeda

Guillaume Hackenberger

A nanodevice capable of controlling the state of electric charge of a metal nanoparticle is provided. The device includes: nanogap electrodesincluding one electrodeA and the other electrodeB disposed so as to have a nanosize gap in between; a nanoparticleplaced between the nanogap electrodes; and a plurality of gate electrodes. At least one of the plurality of gate electrodesis used as a floating gate electrode to control the state of electric charge of the nanoparticle, which achieves a multivalued memory and rewritable logical operation.

Nanodevice

Art electrode pair enables the performance of a device to be accurately delivered, a method for manufacturing the same. An electrode pair, wherein one electrodeA and the other electrodeB are provided on the same plane so as to face each other with a gaptherebetween, and portions of the one electrodeA and the oilier electrodeB facing each other are respectively curved so as to get away from the plane along a direction nearing each other. This electrode pairis manufactured by preparing, as a sample, a substrate on which a pair of seed electrodes is formed with a space therebetween so as to have an initial gap, immersing the sample in an electroless plating solution, changing the electroless plating solution after a lapse of a certain period of time, and adjusting the number of times of changing.

Electrode pair, method for fabricating the same, substrate for device, and device

Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation elementis provided with an electrodeA and the other electrodeB that are provided to have a nanogap, a metal nanoparticlearranged between the electrodeA and the other electrodeB in insulated state, and a plurality of gate electrodesC,D,A,B for adjusting a charge of the metal nanoparticle. Electric current that flows between the electrodeA and the other electrodeB is controlled in accordance with the voltage applied to three or more of the gate electrodesC,D,A,B.

Logical operation element

Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrodeA and an other electrodeB arranged to have a nanogap therebetween; and halide ionprovided between the electrodesA andB; and on one of the electrodes.

Electronic element

This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer; one electrodeA and the other electrodeB provided to have a nanogap on the first insulating layer; a metal nanoparticle or a functional molecule provided between the one electrodeA and the other electrodeB; a second insulating layerprovided on the first insulating layer, and on the one electrodeA and the other electrodeB to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Nanodevice and method for fabricating the same

Growing community of inventors

Uji, Japan

Toshiharu Teranishi