Shin-etsu Handotai Co., Ltd.

Toshiharu Takahashi

Nobuhiko Noto

Masahisa Endo

An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the &lt;110&gt; direction by 8.degree. to 15.degree. or a crystallographically equivalent plane thereto.

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Gunma, Japan

Toshiharu Takahashi