Chisso Corporation

Sony Corporation

Immuno-Biological Laboratories Co., Ltd.

Toshiharu Suzuki

Kisei Kitano

Manabu Uchida

Makoto Ushioda

Yasuyuki Goto

Kazuo Yamamoto

Takashi Noguchi

Katsuya Shirai

Shigeru Kojima

Jiro Kasahara

Keiichi Maeda

Kazuhide Koyama

Michio Arai

Haruyasu Yamaguchi

Susumu Koyama

Tatsuji Oda

Naomi Miyagi

Masaki Nishimura

Yoichi Araki

Naomi Miyagi-Toda

To provide a peptide obtainable by cleaving an N-terminal region and a C-terminal region of Alcadein &#x3b1;, Alcadein &#x3b2;, or Alcadein &#x3b3;; and capable of being a diagnostic marker for Alzheimer's disease. It is possible to detect Alzheimer's disease at an early stage without burdening subjects to be tested by using the peptide as a diagnostic marker.

Marker peptide for alzheimer's disease

A plasma display device such that fluctuation of discharge start voltage and lowering of luminance would not easily occur, the burning phenomenon of the screen is suppressed, and excellent reliability and long life can be secured, and a method of producing the same, are disclosed. The plasma display device comprises a first panel () provided with discharge sustaining electrodes () and a dielectric layer () on the inside thereof, and a second panel () laminated on the first panel () so that discharge spaces () are formed on the inside of the first panel (), and the trap density and/or the movable metallic ion density in the dielectric layer () is not more than 1&#xd7;10pieces/cm, preferably not more than 1&#xd7;10pieces/cm.

Plasma display device and method of producing the same

A trench gate type field effect transistor capable of effectively suppressing the short channel effect is formed with a shallow junction between a source and a drain, at low resistance, and through a simple process. In a method of manufacturing a trench gate type field effect transistor (A), wherein an impurity introduced layer () which is to become a source or a drain is formed by introducing an impurity into a semiconductor substrate (), a trench () is formed in the impurity introduced layer, a gate insulating film () is formed on a bottom face of the trench (), and a gate (G) is formed so as to fill the trench (), laser annealing for activating the impurity is performed after the impurity is introduced into the semiconductor substrate () and before the gate G is formed.

Method of manufacturing a trench gate type field effect transistor

In a method for making a multilayer wiring structure, a second insulating film having an etching rate slower than a first insulating film is provided on the first insulating film covering a wiring pattern; an opening is formed in the second insulating film in a portion corresponding to a connecting hole to be formed afterwards; a third insulating film having an etching rate faster than the second insulating film is provided on the opening and the second insulating film; a groove is formed, so as to expose the opening, in the third insulating film in a portion where an upper-layer wiring pattern is formed, and the connecting hole reaching the wiring pattern is formed; and a connecting plug is formed by packing a conductive material in the connecting hole, and the upper-layer wiring pattern is formed by packing a conductive material in the groove.

Method for making multilayer wiring structure

Liquid-crystal composition for liquid-crystal display elements and

A method of epitaxially growing semiconductor crystal by which a single crystal region which is superior in quality can be selectively formed at a high throughput without employing the lithography technique. A shield mask is formed on an upper face of an amorphous semiconductor layer formed on substrate, and excimer laser light is irradiated upon the amorphous semiconductor layer using the shield mask to produce, in the amorphous semiconductor layer, a core from which crystal is to be grown. After the shield mask is removed, low temperature solid phase annealing processing for the amorphous semiconductor layer is performed to grow crystal from the core to form a single crystal region in the amorphous semiconductor layer. Alternatively, the silicon core is formed by irradiating an energy beam, which is capable of being converged into a thin beam and being used to directly draw a picture, at a predetermined position of the amorphous silicon film.

Method of epitaxial growth of semiconductor

A liquid crystal compound having a relatively low viscosity, a superior compatibility with other liquid crystalline compounds and suitable for preparing a liquid crystal device having a high response rate, and a superior liquid crystal composition containing the compound are provided, which compound is expressed by the formula ##STR1## wherein R.sup.1 is H, F, Cl, CN or 1-20C alkyl or alkenyl in which alkenyl one --CH.sub.2 -- group or two not adjacent --CH.sub.2 -- groups may be replaced by --O-- and in which alkenyl the position and number of the double bond may be optionally chosen; A.sup.1, A.sup.2 and A.sup.3 are ##STR2## the H atom(s) of which ##STR3## may be replaced by F, Cl or methyl; B.sup.1 and B.sup.2 are --CH.sub.2 CH.sub.2 --, --CH.sub.2 O--, --OCH.sub.2 -- or single bond; n is 0 or 1; and m is 0 to 20.

Liquid crystalline compound

A benzoic acid derivative having a large positive dielectric anisotropy value and a superior compatibility, reducing the threshold voltage value of the resulting liquid crystal cell and being very effective for broadening the mesomorphic range of the resulting liquid crystal composiiton and reducing the driving voltage, and a liquid crystal composition containing the derivative are provided, which benzoic acid derivative is expressed by the formula ##STR1## wherein R represents an alkyl group of 1 to 10 carbon atoms and A represents ##STR2##

Benzoic acid derivative having a large positive dielectric anisotropy

A liquid crystal substance having a low viscosity and good compatibility thereof with existing liquid crystals at low temperatures in addition to a large optical anisotropy value and a high clearing point and a liquid crystal composition containing the substance are provided, which substance is a 4-(trans-4-alkylcyclohexylmethyloxy)-4'-substituted-tolan expressed by the formula ##STR1## wherein R.sup.1 is 1-10C alkyl and R.sup.2 is 1-10C alkyl or F or Cl.

Tolan compound and liquid crystal composition containing the same

A liquid crystalline compound useful as a component of liquid crystal compositions for TN mode display elements and having a large positive .DELTA..epsilon. value and also a low viscosity for the .DELTA..epsilon. value and a liquid crystal composition containing the compound are provided, which compound is expressed by the formula ##STR1## wherein n represents an integer of 0 to 20.

Liquid crystal compound

A liquid crystalline compound and a liquid crystal composition containing the compound usable for liquid crystal display devices are provided, which liquid crystalline compound is expressed by the formula

Liquid crystal composition

An annealing method for heating a sample by applying radiation of light beams thereto, arranged so that the radiant power of the light beams is sampled or monitored by a light detector (a light detector 12, for example, formed of a phototransistor, photodiode, and the like) and the radiant power of the light beams is controlled through a feedback with the data derived from the monitoring used as the feedback control signal so that the heating temperature of the sample is stabilized. The annealing can be performed with excellent reproducibility from sample to sample.

Growing community of inventors

Kanagawa, Japan

Toshiharu Suzuki