Nec Corporation

Renesas Electronics Corporation

Nisshinbo Industries, Inc.

Nec Electronics Corporation

Toshiharu Okamoto

Kazuo Saito

Atsushi Hagiwara

Kazutoshi Hamada

Hideki Sasaki

Osamu Hasegawa

Muneaki Matsushige

Susumu Takano

Fumio Tanno

Kenichi Kuboyama

Ayumi Horiuchi

Toshihiko Funaki

Kazunori Yamane

Yoshihiro Masumura

Shuuichi Senou

Akira Satou

The present invention provides a multichip package in which a first semiconductor chip having an RF analog circuit area and a digital circuit area, and a second semiconductor chip having a digital circuit area are plane-arranged over an organic multilayer wiring board and coupled to each other by bonding wires. In the multichip package, the first semiconductor chip is made thinner than the second semiconductor chip.

Semiconductor integrated circuit device

The disclosed invention is intended to adjust the driving power of an oscillation circuit to be optimal with a simple circuit configuration. A chip includes an oscillation circuit, an amplifier, an effective value measuring circuit, and a control unit. The oscillation circuit includes an inverting amplifier and a resistor coupled in parallel to the inverting amplifier. The oscillation circuit in which the inverting amplifier is coupled to a crystal oscillator outside the chip generates an oscillation circuit by driving the crystal oscillator. The effective value measuring circuit measures an effective value of an oscillation signal produced by the oscillation circuit. The control unit controls the gain of the inverting amplifier so that the effective value will be equal to a target voltage.

Semiconductor device

A semiconductor apparatus according to an aspect of the present invention includes first and second bus-interface circuits, a first memory core connected to the first bus-interface circuit through a first data bus, the first memory core being connected to a first access control signal output from the first bus-interface circuit, a second memory core connected to the second bus-interface circuit through a second data bus, and a select circuit that selectively connects one of the first access control signal and a second access control signal output from the second bus-interface circuit to the second memory core.

Semiconductor apparatus

Provided is a semiconductor apparatus including a divided voltage generation circuit that includes a first resistor element and a first transistor connected in series between a first power supply and a second power supply and generates a divided voltage by dividing a voltage difference between the first power supply and the second power supply with a resistance ratio of the first resistor element and the first transistor specified according to a level of a first current flowing to the first transistor, and a current control circuit that includes a second transistor that is connected in a mirror configuration to the first transistor and determines the level of the first current by a control current flowing from a first terminal to a second terminal, and increases and decreases the control current according to an increase and decrease in a voltage difference between the first power supply and a ground power supply.

A semiconductor device includes a first voltage generator which outputs a first signal to a first node, a second voltage generator which outputs a second signal to a second node, a capacitor coupled between the first and second nodes; and a current supply circuit coupled to said second node. While the first voltage generator outputs the first signal to set the first node to a first voltage potential, the second voltage generator is activated to output the second signal to set the second node to a second voltage potential. At that time, the capacitor influences to the second node, based on a coupling capacitance thereof and the current supplying circuit supplies a current to suppress the influence.

Semiconductor integrated circuit device having internal voltage generating circuit

Disclosed is a booster circuit comprising a voltage detection circuit for outputting a decision output signal for detecting a boosted voltage and controlling a voltage boosting operation, an oscillation circuit, and a plurality of charge pump circuits. The oscillation circuit includes an odd number of stages of control-type inverters. When the decision output signal from the voltage detection circuit indicates the voltage boosting operation (oscillation), the odd number of stages of inverters constitute a closed path. Oscillation outputs from outputs of the control-type inverters are thereby extracted, respectively. When the decision output signal indicates a stop of the voltage boosting operation (stop of the oscillation), output values of the control-type inverters are not inverted and held, and the oscillation is thereby stopped. The charge pump circuits receive output signals from the control-type inverters as clock signals, respectively, and operate.

Booster circuit including an oscillator

A booster circuit for boosting an externally supplied voltage includes a plurality of parallel-connected charge pump units. The charge pump units are activated successively in accordance with a boosted voltage to suppress peak current at start-up of the booster circuit and reduce fluctuation of power supply voltage.

Booster circuit and semiconductor device having same

A method of producing a fuel cell separator in which dry granules of a composition for a fuel cell separator mainly containing a conductive material, a binder, and an additive are produced by mixing raw materials including at least the conductive material, the binder, and the additive, granulating the resultant mixture to obtain granules, and drying the granules. The dry granules may be further sized. Then the granules are packed in a mold and hot-press molded. The granules have a residual volatile matter content in a range of 4 weight-% or less, and an average particle size in a range of 200 to 700 &mgr;m (60 to 160 &mgr;m for the sized granules) and a specific particle size distribution.

Method of producing fuel cell separator, fuel cell separator, and polymer electrolyte fuel cell

A voltage-divided voltage from a power supply voltage-dividing circuit is compared at a comparison circuit with a reference voltage from a reference voltage generation circuit. A low power-supply voltage signal is output, this signal being ON if the voltage-divided voltage is lower than the reference voltage, and OFF if the voltage-divided voltage is greater than the reference voltage. A low power-supply voltage control circuit receives the low power-supply voltage signal and, when the low power-supply voltage signal switches from OFF to ON, either suspends or executes an operation of switching a memory control signal that is output to the nonvolatile memory from active to inactive. This switching operation is halted at times such as when a power-supply voltage drop of extremely short time interval is expected.

Operating efficiency of a nonvolatile memory

The present invention provides a separator for fuel cell which alleviates the problems of the prior art, which has high conductivity, high gas impermeability and high strength, and which can be produced easily. The separator for fuel cell according to the present invention is a molding comprising a conductive carbon powder and a polymer compound, wherein the conductive carbon powder in the molding has an aspect ratio of 4 to 60.

Separator for fuel cells

In a negative voltage generating circuit, a reference voltage generating circuit generates a first reference voltage. A voltage dividing circuit divides a voltage between the first reference voltage and a negative voltage to produce a division voltage. A comparing circuit compares a second reference voltage and the division voltage. A negative voltage generating section generates the negative voltage based on the comparing result by the comparing circuit to supply to the voltage dividing circuit. A potential corresponding to the division voltage is equal to the ground potential when the negative voltage is equal to a desired value.

Generation of negative voltage using reference voltage

Of the MOSFETs used to implement an oscillator circuit or a delay circuit in a semiconductor device, minimally the MOSFETs P12 (N12) used in a part of the circuit that affects the oscillation period or delay time are low-threshold-voltage type MOSFETs.

Ring oscillator and delay circuit using low threshold voltage type

The present invention provides; (1) a polarizable electrode for an electric double-layer capacitor, which includes a solid activated carbon obtained by pyrolyzing a mixture mainly containing an activated carbon and a thermosetting resin and which has, on the surface and/or inside, holes free from the solid activated carbon, and holes having a diameter of 5 .mu.m-70 .mu.m possessing a capacity of 0.01 cc/g-1.0 cc/g; (2) a process for producing the above polarizable electrode for an electric double-layer capacitor, which includes heat-treating, as necessary, a mixture mainly containing an activated carbon, a thermosetting resin and a fiber capable of vaporizing upon heating and then pyrolyzing the resulting materiall and (3) an electric double-layer capacitor including at least a pair of the above polarizable electrodes for an electric double-layer capacitor and an electroyte impregnated between the polarizable electrodes. The above polarizable electrode for an electric double-layer capacitor is free from the drawbacks of conventoinal polarizable electrodes, has a low internal resistance and can be charged with or can discharge a large electric current of several amperes to several hundreds of amperes momentarily.

Growing community of inventors

Kanagawa, Japan

Toshiharu Okamoto