Ngk Insulators, Inc.

Ngk Adrec Co., Ltd.

Other

Tokyo Institute of Technology

Toshiharu Kinoshita

Shinichi Miwa

Tsuneo Komiyama

Iori Himoto

Yukitaka Kato

Jun Kariya

Shigeru Ogura

A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.

Heat storage member

A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000&#xb0; C. or less.

A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and SiNand/or SiNO as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 &#x3bc;m as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 &#x3bc;m, 10 to 30% by mass of a Si powder of 0.05 to 30 &#x3bc;m, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg.

SiC refractory comprising silicon nitride bond thereto and method for production thereof

A high thermal conductive material includes substantially silicon carbide and metal silicon, and preferably is formed by impregnating the space between the bonded silicon carbide crystals with the metal silicon. The production process comprises adding an organic binder and a dispersant or a binder having a dispersing effect to a silicon carbide powder to obtain a mixture, forming the mixture by cast forming or pressure forming to obtain a formed product, treating the formed product with heat at 2,100&#x2013;2,500&#xb0; C. for 1&#x2013;5 hours to obtain a base material, impregnating the base material with an organic resin, treating the base material with heat, and impregnating the base material with metal silicon at 1,450&#x2013;1,800&#xb0; C. under reduced pressure. The high thermal conductive material exhibits not only properties that satisfy the balance between the coefficient of thermal expansion and the coefficient of thermal conductivity required for actual electronic components (including semiconductor devices) and the like, but also high thermal conductivity.

High thermal conductive material having high thermal conductivity and process for producing the same

There is provided a jig for use in heat treatment onto which a vitreous plate having had films exhibiting respective given functions formed on its surface is to be loaded when the vitreous plate undergoes heat treatment. The jig contains 50% by weight or more phase containing SiC, its thermal conductivity is 10 W/mK or more, its apparent porosity 0.2 to 25%, and in that its coefficient of thermal expansion is 3.8&times;10 /&deg;C. to 5.5&times;10 /&deg;C.

Growing community of inventors

Kakamigahara, Japan

Toshiharu Kinoshita